Papnai Bhartendu, Chen Ding-Rui, Ghosh Rapti, Yen Zhi-Long, Chen Yu-Xiang, Rehman Khalil Ur, Chen Hsin-Yi Tiffany, Hsieh Ya-Ping, Hofmann Mario
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300044, Taiwan.
Nanoscience and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 10617, Taiwan.
Nanomaterials (Basel). 2024 Jun 3;14(11):972. doi: 10.3390/nano14110972.
Two-dimensional (2D) materials promise advances in electronic devices beyond Moore's scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.
二维（2D）材料有望通过扩展功能，如器件参数对输入参数的非单调依赖性，在超越摩尔定律缩放的电子器件方面取得进展。然而，诸如负微分电阻（NDR）和反双极性行为等效应的稳健性和性能，由于依赖原子缺陷和复杂异质结，在规模和稳健性方面受到限制。在本文中，我们引入了一种新颖的器件概念，该概念利用二维材料与分子层之间结的量子电容。我们通过石墨烯与硬脂酸单层的可扩展集成实现了可变电容二维分子结（vc2Dmj）二极管。即使在室温下，vc2Dmj也表现出具有显著峰谷比的NDR和有源负电阻区域。通过热电测量和从头算计算确定这种独特行为的起源是石墨烯与分子层之间的杂化效应。通过形态优化提高器件参数突出了我们的方法在推进未来电子领域新功能方面的潜力。
