Du Yanan, Xu Yun, Huang Kai, Shao Hanxiao, Zhu Kejian
Shandong Inspur Artificial Intelligence Research Institute Company Limited, Jinan, Shandong, China.
Shandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co., Ltd., Shandong, China.
Heliyon. 2024 Jun 6;10(11):e32543. doi: 10.1016/j.heliyon.2024.e32543. eCollection 2024 Jun 15.
The resonance enhanced InAs/GaSb type-II Superlattices (T2SLs) infrared detectors with diffraction rings is designed, and the photoelectric characteristics are calculated and studied in this paper. The diffraction rings are designed on the top surface of T2SLs detector to control the incident light inside the device by forming the resonant cavity. We designed the structure of the conventional PIN InAs/GaSb T2SLs photodetector, calculated the energy band structure of the absorption layer, and analyzed the influence of the thickness of the absorption layer on the photoelectric performance. It is proved that blindly increasing the thickness of the absorption layer cannot effectively improve the device performance. We further studied the quantum efficiency (QE) and electric field distribution of the device after adding the diffraction ring structure. The results show that the structure with diffraction rings can significantly improve the QE of the photodetector without increasing the dark current. The interaction between the diffraction ring and the metal contact layer will enhance the localization of the electric field and further increase the light absorption between the semiconductor layers.
本文设计了具有衍射环的共振增强型InAs/GaSb II型超晶格（T2SLs）红外探测器，并对其光电特性进行了计算和研究。在T2SLs探测器的顶表面设计衍射环，通过形成共振腔来控制器件内部的入射光。我们设计了传统PIN InAs/GaSb T2SLs光电探测器的结构，计算了吸收层的能带结构，并分析了吸收层厚度对光电性能的影响。结果表明，盲目增加吸收层厚度并不能有效提高器件性能。我们进一步研究了添加衍射环结构后器件的量子效率（QE）和电场分布。结果表明，具有衍射环的结构可以在不增加暗电流的情况下显著提高光电探测器的QE。衍射环与金属接触层之间的相互作用将增强电场的局域化，并进一步增加半导体层之间的光吸收。
