Trausa Annamarija, Oras Sven, Vlassov Sergei, Antsov Mikk, Tiirats Tauno, Kyritsakis Andreas, Polyakov Boris, Butanovs Edgars
Institute of Solid State Physics, University of Latvia, LV-1063 Riga, Latvia.
Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia.
Beilstein J Nanotechnol. 2024 Jun 18;15:704-712. doi: 10.3762/bjnano.15.58. eCollection 2024.
Due to the recent interest in ultrawide bandgap β-GaO thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of GaO nanowires (NWs). In this work, we investigated the elastic modulus of individual β-GaO NWs using two distinct techniques - in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies. The resonance tests yielded the mean elastic modulus of 34.5 GPa, while 75.8 GPa mean value was obtained via three-point bending. The measured elastic moduli values indicate the need for finely controllable β-GaO NW synthesis methods and detailed post-examination of their mechanical properties before considering their application in future nanoscale devices.
由于近期超宽带隙β-GaO薄膜和纳米结构在各种电子器件和紫外器件应用中受到关注，了解GaO纳米线（NWs）的力学性能非常重要。在这项工作中，我们使用两种不同的技术——原位扫描电子显微镜共振和原子力显微镜中的三点弯曲，研究了单个β-GaO NWs的弹性模量。使用X射线衍射、透射电子显微镜和扫描电子显微镜研究了合成NWs的结构和形态特性。共振测试得到的平均弹性模量为34.5 GPa，而通过三点弯曲得到的平均值为75.8 GPa。测得的弹性模量值表明，在考虑将其应用于未来的纳米级器件之前，需要精细可控的β-GaO NW合成方法，并对其力学性能进行详细的后处理检查。
