Fujimoto So, Matsuo Takeshi, Nakata Yasuhiro, Shiojima Honoka
Department of Neurosurgery, Tokyo Metropolitan Neurological Hospital, Fuchu, Tokyo, Japan.
Department of Neuroradiology, Tokyo Metropolitan Neurological Hospital, Fuchu, Tokyo, Japan.
Surg Neurol Int. 2024 Jun 7;15:190. doi: 10.25259/SNI_74_2024. eCollection 2024.
Subdural electrode (SDE) implantation is an important method of diagnosing epileptogenic lesions and mapping brain function, even with the current preference for stereoelectroencephalography. We developed a novel method to assess SDEs and the brain surface during the electrode implantation procedure using brain images printed onto permeable films and intraoperative fluoroscopy. This method can help verify the location of the electrode during surgery and improve the accuracy of SDE implantation.
We performed preoperative imaging by magnetic resonance imaging and computed tomography. Subsequently, the images were edited and fused to visualize the gyrus and sulcus better. We printed the images on permeable films and superimposed them on the intraoperative fluoroscopy display. The intraoperative and postoperative coordinates of the electrodes were obtained after the implantation surgery, and the differences in the locations were calculated.
Permeable films were created for a total of eight patients with intractable epilepsy. The median difference of the electrodes between the intraoperative and postoperative images was 4.6 mm (Interquartile range 2.9-7.1). The locations of electrodes implanted outside the operation field were not significantly different from those implanted inside.
Our new method may guide the implantation of SDEs into their planned location.
硬膜下电极(SDE)植入是诊断致痫性病变和绘制脑功能图的重要方法,即便当前更倾向于立体脑电图检查。我们开发了一种新方法,在电极植入过程中,利用印在可渗透膜上的脑部图像和术中荧光透视来评估SDE和脑表面。该方法有助于在手术过程中验证电极位置,并提高SDE植入的准确性。
我们通过磁共振成像和计算机断层扫描进行术前成像。随后,对图像进行编辑和融合,以更好地显示脑回和脑沟。我们将图像印在可渗透膜上,并将其叠加在术中荧光透视显示屏上。植入手术后获取电极的术中及术后坐标,并计算位置差异。
共为8例难治性癫痫患者制作了可渗透膜。电极在术中与术后图像之间的中位数差异为4.6毫米(四分位间距2.9 - 7.1)。植入手术区域外的电极位置与手术区域内的电极位置无显著差异。
我们的新方法可能会将SDE植入到计划位置。