使用顺序化学气相沉积法对范德华异质结构进行横向图案化的协议。
Protocol for lateral patterning of van der Waals heterostructures using sequential chemical vapor deposition.
作者信息
Cha Soonyoung, Han Hyeuk-Jin, Ahn Ji-Hoon, Jin Gangtae
机构信息
Department of Physics and Astronomy, University of California, Riverside, Riverside, CA, USA.
Department of Environment and Energy Engineering, Sungshin Women's University, Seoul 01133, Republic of Korea.
出版信息
STAR Protoc. 2025 Apr 8;6(2):103755. doi: 10.1016/j.xpro.2025.103755.
Previous work demonstrates that scalable area-selective deposition of van der Waals monolayers enables tunable design of atomically thin electronic and photonic platforms. Here, we present a protocol for lateral patterning of MoS-WS heterostructures using sequential chemical vapor deposition. We describe steps for constructing patterned lateral heterostructures with alternating channels from nanometers to micrometers. This protocol has potential application in next-generation atomically thin electronic circuits. For complete details on the use and execution of this protocol, please refer to Lee et al..
先前的工作表明，范德华单层的可扩展区域选择性沉积能够实现原子级薄的电子和光子平台的可调设计。在此，我们展示了一种使用顺序化学气相沉积对MoS-WS异质结构进行横向图案化的方法。我们描述了构建具有从纳米到微米交替通道的图案化横向异质结构的步骤。该方法在下一代原子级薄电子电路中具有潜在应用。有关此方法的使用和执行的完整详细信息，请参考Lee等人的研究。
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