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用于可重构逻辑内存的多铁性磁振子扭矩的电压控制

Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory.

作者信息

Chai Yahong, Liang Yuhan, Xiao Cancheng, Wang Yue, Li Bo, Jiang Dingsong, Pal Pratap, Tang Yongjian, Chen Hetian, Zhang Yuejie, Bai Hao, Xu Teng, Jiang Wanjun, Skowroński Witold, Zhang Qinghua, Gu Lin, Ma Jing, Yu Pu, Tang Jianshi, Lin Yuan-Hua, Yi Di, Ralph Daniel C, Eom Chang-Beom, Wu Huaqiang, Nan Tianxiang

机构信息

School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.

School of Materials Science and Engineering, Tsinghua University, Beijing, China.

出版信息

Nat Commun. 2024 Jul 16;15(1):5975. doi: 10.1038/s41467-024-50372-3.

DOI:10.1038/s41467-024-50372-3
PMID:39013854
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11252438/
Abstract

Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables-ferroelectric polarization and magnetization-we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.

摘要

磁振子是携带角动量的玻色子准粒子,能够在绝缘体中流动以进行信息传输,且功耗极低。然而,由于缺乏对磁振子输运的有效电操控手段,开发基于磁振子的逻辑电路仍然具有挑战性。在此,我们展示了在自旋源/多铁性材料/铁磁体结构中对多铁性磁振子模式进行电激发和控制的方法。我们证明,通过控制具有反铁磁和铁电耦合序的多铁性铋铁氧体薄膜中的非共线反铁磁结构,铁电极化可以电调制磁振子介导的自旋轨道转矩。在这种多铁性磁振子转矩器件中,磁振子信息通过磁振子介导的自旋转矩被编码到铁磁位中。通过操纵两个耦合的非易失性状态变量——铁电极化和磁化强度——我们进一步在单个器件中实现了可重构逻辑运算。我们的研究结果突出了多铁性材料在控制磁振子信息传输方面的潜力,并为实现用于内存计算的室温电压控制、低功耗、可扩展磁子学提供了一条途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/b64bc557eacc/41467_2024_50372_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/7584c37a7ec7/41467_2024_50372_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/bc5d187366ba/41467_2024_50372_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/d56a8271208c/41467_2024_50372_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/b64bc557eacc/41467_2024_50372_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/7584c37a7ec7/41467_2024_50372_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/bc5d187366ba/41467_2024_50372_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/d56a8271208c/41467_2024_50372_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/64c3/11252438/b64bc557eacc/41467_2024_50372_Fig4_HTML.jpg

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