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使用透射电子显微镜-电子能量损失谱探测二维六方氮化硼中碳氢覆盖层下的缺陷

Probing Defectivity Beneath the Hydrocarbon Blanket in 2D hBN Using TEM-EELS.

作者信息

Byrne Dana O, Ciston Jim, Allen Frances I

机构信息

Department of Chemistry, University of California, Berkeley, CA 94720, USA.

Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA.

出版信息

Microsc Microanal. 2024 Aug 21;30(4):650-659. doi: 10.1093/mam/ozae064.

DOI:10.1093/mam/ozae064
PMID:39028755
Abstract

The controlled creation and manipulation of defects in 2D materials has become increasingly popular as a means to design and tune new material functionalities. However, defect characterization by direct atomic-scale imaging is often severely limited by surface contamination due to a blanket of hydrocarbons. Thus, analysis techniques that can characterize atomic-scale defects despite the contamination layer are advantageous. In this work, we take inspiration from X-ray absorption spectroscopy and use broad-beam electron energy loss spectroscopy (EELS) to characterize defect structures in 2D hexagonal boron nitride (hBN) based on averaged fine structure in the boron K-edge. Since EELS is performed in a transmission electron microscope (TEM), imaging can be performed in-situ to assess contamination levels and other factors such as tears in the fragile 2D sheets, which can affect the spectroscopic analysis. We demonstrate the TEM-EELS technique for 2D hBN samples irradiated with different ion types and doses, finding spectral signatures indicative of boron-oxygen bonding that can be used as a measure of sample defectiveness depending on the ion beam treatment. We propose that even in cases where surface contamination has been mitigated, the averaging-based TEM-EELS technique can be useful for efficient sample surveys to support atomically resolved EELS experiments.

摘要

二维材料中缺陷的可控产生与操控作为一种设计和调节新材料功能的手段,已变得越来越流行。然而,由于一层碳氢化合物造成的表面污染,通过直接原子尺度成像进行缺陷表征往往受到严重限制。因此,能够在存在污染层的情况下表征原子尺度缺陷的分析技术具有优势。在这项工作中,我们从X射线吸收光谱学中获得灵感,并使用宽束电子能量损失谱(EELS)基于硼K边的平均精细结构来表征二维六方氮化硼(hBN)中的缺陷结构。由于EELS是在透射电子显微镜(TEM)中进行的,因此可以原位成像以评估污染水平以及其他因素,如脆弱的二维薄片中的撕裂,这些因素可能会影响光谱分析。我们展示了用于不同离子类型和剂量辐照的二维hBN样品的TEM - EELS技术,发现了指示硼 - 氧键合的光谱特征,这些特征可根据离子束处理用作样品缺陷程度的度量。我们提出,即使在表面污染已减轻的情况下,基于平均的TEM - EELS技术对于高效的样品检测以支持原子分辨的EELS实验也可能是有用的。

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