Maier Christian, Leitgeb Verena, Egger Larissa, Köck Anton
Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, 8700 Leoben, Austria.
Institute for Chemistry and Technology of Materials, TU Graz, Stremayrgasse 9, 8010 Graz, Austria.
Nanomaterials (Basel). 2024 Jul 16;14(14):1207. doi: 10.3390/nano14141207.
An experimental characterization of cupric oxide nanowire (CuO NW) growth from thermally oxidized, microstructured Cu thin films is performed. We have systematically studied the influence of the thickness and dimension of Cu layers on the synthesis of CuO NW. The objective was to determine the optimum Cu geometries for increased CuO NWs growth to bridge the gap between adjacent Cu structures directly on the chip for gas sensing applications. Thresholds for CuO-NW growth regarding film thickness and lateral dimensions are identified based on SEM images. For a film thickness of 560 nm, NWs with lengths > 500 nm start to grow from the edges of Cu structures with an area ≥ 4 µm. NWs growing from the upper surface were observed for an area ≥ 16 µm. NW growth between adjacent thermally oxidized thin films was analyzed. The study provides information on the most relevant parameters of CuO NWs growth, which is mandatory for integrating CuO NWs as gas sensor components directly on microchips. Based on this result, the gap size of the structure was varied to find the optimum value of 3 µm.
对由热氧化的微结构铜薄膜生长氧化铜纳米线（CuO NW）进行了实验表征。我们系统地研究了铜层的厚度和尺寸对CuO NW合成的影响。目的是确定最佳的铜几何形状，以增加CuO NW的生长，从而直接在芯片上弥合相邻铜结构之间的间隙，用于气体传感应用。基于扫描电子显微镜（SEM）图像确定了关于膜厚度和横向尺寸的CuO-NW生长阈值。对于560 nm的膜厚度，长度>500 nm的纳米线开始从面积≥4 µm的铜结构边缘生长。对于面积≥16 µm的情况，观察到纳米线从上表面生长。分析了相邻热氧化薄膜之间的纳米线生长。该研究提供了关于CuO NW生长最相关参数的信息，这对于将CuO NW作为气体传感器组件直接集成在微芯片上是必不可少的。基于此结果，改变结构的间隙尺寸以找到3 µm的最佳值。
