Deng Zu-Yin, Lin Wan-Yu, Kumar Utkarsh, Chen Kuen-Lin, Wang Te-Hsien, Chen Jau-Han, Wu Chiu-Hsien
Department of Physics, National Chung Hsing University, Taichung 402, Taiwan.
Institute of Nanoscience, National Chung Hsing University, Taichung 402, Taiwan.
ACS Appl Mater Interfaces. 2024 Aug 7;16(31):41495-41503. doi: 10.1021/acsami.4c07392. Epub 2024 Jul 29.
This study explores the utilization of the organic conductive molecule Polypyrrole (PPy) for the modification of Indium Gallium Zinc Oxide (IGZO) nanoparticles, aiming to develop highly sensitive ozone sensors. Pyrrole (Py) molecules undergo polymerization, resulting in the formation of extended chains of PPy that graft onto the surface of IGZO nanoparticles. This interaction effectively diminishes oxygen vacancies on the IGZO surface, thereby promoting the crystallization of the IGZO (1114) facets. The resultant structure exhibits promising potential for achieving high-performance wideband semiconductor gas sensors. The IGZO/PPy device forms a Straddling Gap heterojunction, facilitating enhanced electron transfer between IGZO and ozone molecules. Notably, the adsorption and desorption of ozone gas occur efficiently at a low temperature of approximately 25 °C, obviating the need for additional energy typically associated with wide bandgap semiconductor materials. Density Functional Theory (DFT) calculations attribute this efficiency to the enhanced number of active sites for ozone adsorption, facilitated by hydrogen bonds. The substantial conductivity of PPy, combined with its planar ring structure, induces positively charged polarization on the IGZO side upon ozone adsorption. The resultant device exhibits exceptional sensitivity, boasting a 4-fold improvement compared to sensors reliant solely on IGZO. Additionally, the response time is significantly reduced by a factor of 10, underscoring the practical viability and enhanced performance of the IGZO/PPy sensor field.
本研究探索了利用有机导电分子聚吡咯(PPy)对铟镓锌氧化物(IGZO)纳米颗粒进行改性,旨在开发高灵敏度的臭氧传感器。吡咯(Py)分子发生聚合反应,形成接枝到IGZO纳米颗粒表面的PPy延伸链。这种相互作用有效地减少了IGZO表面的氧空位,从而促进了IGZO(1114)晶面的结晶。所得结构在实现高性能宽带半导体气体传感器方面展现出了广阔的潜力。IGZO/PPy器件形成了跨隙异质结,促进了IGZO与臭氧分子之间增强的电子转移。值得注意的是,臭氧气体的吸附和解吸在约25°C的低温下高效发生,无需通常与宽带隙半导体材料相关的额外能量。密度泛函理论(DFT)计算将这种效率归因于氢键促进的臭氧吸附活性位点数量的增加。PPy的高电导率及其平面环结构,在臭氧吸附时在IGZO一侧诱导出带正电的极化。所得器件表现出卓越的灵敏度,与仅依赖IGZO的传感器相比提高了4倍。此外,响应时间显著缩短了10倍,突出了IGZO/PPy传感器领域的实际可行性和增强的性能。