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新开发的AZnGeO（A = K，Li）薄膜的创新合成、结构特性、线性和非线性光学性质以及光电参数。

Innovative synthesis, structural characteristics, linear and nonlinear optical properties, and optoelectric parameters of newly developed AZnGeO (A = K, Li) thin films.

作者信息

Ben Yahya Sourour, El Karout Houda, Sahraoui Bouchta, Barillé Regis, Louati Bassem

机构信息

Laboratory of Spectroscopic Characterisation and Optics of Materials, Faculty of Sciences, University of Sfax B. P. 1171 3000 Sfax Tunisia

Univ Angers, LPHIA SFR MATRIX F-49000 Angers France.

出版信息

RSC Adv. 2024 Jul 29;14(33):23802-23815. doi: 10.1039/d4ra03742a. eCollection 2024 Jul 26.

DOI:10.1039/d4ra03742a
PMID:39077322
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11284914/
Abstract

The synthesis of high-quality thin films through spin coating deposition on meticulously cleaned glass substrates is presented. Optical band gaps of both samples using the Kubelka-Munk function are determined. The data analysis uncovers the presence of optical allowed direct transition for AZnGeO (A = K, Li). Spectroscopic ellipsometry measurements on AZnGeO (A = K, Li) thin films and an analysis of their optical properties using the Cauchy model are presented. Furthermore, the increase of the thickness of the thin film results in improvements in their optoelectrical parameters, such as electrical conductivity, optical mobility, and optical conductivity. Using the Kubodera and Kobayashi comparative model, the third order nonlinear susceptibility ( ) was estimated based on the compounds' high linear absorption of the generated third harmonic wavelength (355 nm). This paper presents remarkable NLO results that reveal potential uses in optoelectronics and photonics.

摘要

本文介绍了通过旋涂沉积在精心清洁的玻璃基板上合成高质量薄膜的方法。使用库贝尔卡-蒙克函数确定了两个样品的光学带隙。数据分析揭示了AZnGeO（A = K，Li）存在光学允许的直接跃迁。介绍了对AZnGeO（A = K，Li）薄膜的光谱椭偏测量以及使用柯西模型对其光学性质的分析。此外，薄膜厚度的增加导致其光电参数（如电导率、光学迁移率和光导率）得到改善。利用久保寺和小林比较模型，基于化合物对产生的三次谐波波长（355 nm）的高线性吸收，估计了三阶非线性极化率（ ）。本文展示了显著的非线性光学结果，揭示了其在光电子学和光子学中的潜在用途。

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