Li Dianlun, Yan Jiang, Zhang Ying, Wang Junzhuan, Yu Linwei
School of Electronic Science and Engineering, National Laboratory of Solid-State Microstructures, Nanjing University, 210023 Nanjing, China.
Nano Lett. 2024 Sep 18;24(37):11403-11410. doi: 10.1021/acs.nanolett.4c01999. Epub 2024 Jul 31.
The high operating voltage of conventional nanoelectromechanical switches, typically tens of volts, is much higher than the driving voltage of the complementary metal oxide semiconductor integrated circuit (∼1 V). Though the operating voltage can be reduced by adopting a narrow air gap, down to several nanometers, this leads to formidable manufacturing challenges and occasionally irreversible switch failures due to the surface adhesive force. Here, we demonstrate a new nanowire-morphed nanoelectromechanical (NW-NEM) switch structure with ultralow operation voltages. In contrast to conventional nanoelectromechanical switches actuated by unidirectional electrostatic attraction, the NW-NEM switch is bidirectionally driven by Lorentz force to allow the use of a large air gap for excellent electrical isolation, while achieving a record-low driving voltage of <0.2 V. Furthermore, the introduction of the Lorentz force allows the NW-NEM switch to effectively overcome the adhesion force to recover to the turn-off state.
传统纳米机电开关的高工作电压通常为几十伏,远高于互补金属氧化物半导体集成电路的驱动电压(约1伏)。尽管通过采用窄气隙可将工作电压降低至几纳米,但这会带来巨大的制造挑战,并且由于表面粘附力偶尔会导致不可逆的开关故障。在此,我们展示了一种具有超低工作电压的新型纳米线变形纳米机电(NW-NEM)开关结构。与由单向静电引力驱动的传统纳米机电开关不同,NW-NEM开关由洛伦兹力双向驱动,从而能够使用较大的气隙实现出色的电隔离,同时实现了<0.2 V的创纪录低驱动电压。此外,洛伦兹力的引入使NW-NEM开关能够有效克服粘附力,恢复到关断状态。