Kavli Nanoscience Institute, Mail Code 114-36, California Institute of Technology, Pasadena, California 91125, USA.
Nano Lett. 2010 Aug 11;10(8):2891-6. doi: 10.1021/nl1009734.
We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as approximately 20 nm and lateral switching gaps as narrow as approximately 10 nm. Very low switch-on voltages are obtained, from a few volts down to approximately 1 V level. Two-terminal, contact-mode "hot" switching with high on/off ratios (>10(2) or 10(3)) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.
我们报告了基于非常薄的碳化硅 (SiC) 纳米线 (NW) 的静电驱动、接触模式纳米机电开关的实验演示。这些 NW 是通过光刻从异质外延在单晶硅 (Si) 上的 50nm 厚的 SiC 层上图案化而成的。已经实现了几种通用的平面内静电 SiC NW 开关设计，NW 宽度小至约 20nm，横向开关间隙窄至约 10nm。从几伏特到大约 1V 电平，获得了非常低的导通电压。已经为许多器件反复演示了具有高 ON/OFF 比 (>10(2) 或 10(3))的两终端、接触模式“热”开关。我们发现，在裸 SiC NW 中，开关性能得到了增强，其寿命超过了基于金属化 SiC NW 的寿命。
