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通过电荷注入对单个二硫化钼纳米管的功函数和形态进行调制。

Modulations of the work function and morphology of a single MoS nanotube by charge injection.

作者信息

Remškar Maja, Jelenc Janez, Czepurnyi Nikolai, Malok Matjaž, Pirker Luka, Schreiner Rupert, Hüttel Andreas K

机构信息

Solid State Physics Department, Jozef Stefan Institute Jamova ulica 39 SI-1000 Ljubljana Slovenia

Faculty of Applied Natural Sciences and Cultural Studies OTH Regensburg 93053 Regensburg Germany.

出版信息

Nanoscale Adv. 2024 Jul 22;6(16):4075-4081. doi: 10.1039/d4na00490f. eCollection 2024 Aug 6.

DOI:10.1039/d4na00490f
PMID:39114154
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11302029/
Abstract

Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function.

摘要

晶体管组件的小型化以及对具有量子信息处理潜力的材料系统的持续研究,显著提高了研究人员目前对半导体无机纳米管的兴趣。在此,我们报告这些纳米结构的另一个突出方面,即电子和机械性能的内在耦合。我们观察到单个MoS纳米管在通过原子力显微镜尖端进行电荷注入时的电子和形态变化。纳米管的椭圆形变形和螺旋扭曲清晰可见,这与逆压电效应一致。发现功函数变化取决于注入载流子的极性。观察到形状变形意外地长期持续存在,并通过结构缺陷的积累和由此产生的应变来解释,这可能导致类似记忆的电荷限制和功函数的持久调制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/31f29dec6d9d/d4na00490f-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/665334d2b1d8/d4na00490f-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/56abe52dcca7/d4na00490f-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/638170a47787/d4na00490f-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/cacde6a00a0c/d4na00490f-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/31f29dec6d9d/d4na00490f-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/665334d2b1d8/d4na00490f-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/56abe52dcca7/d4na00490f-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/638170a47787/d4na00490f-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/cacde6a00a0c/d4na00490f-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/fc12/11302029/31f29dec6d9d/d4na00490f-f5.jpg

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本文引用的文献

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Non-Destructive Low-Temperature Contacts to MoS Nanoribbon and Nanotube Quantum Dots.与二硫化钼纳米带和纳米管量子点的非破坏性低温接触
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