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通过引入系统的晶格应变来调制二硫化钼纳米片的功函数。

Work Function Modulation of Molybdenum Disulfide Nanosheets by Introducing Systematic Lattice Strain.

机构信息

School of Physical Sciences, Jawaharlal Nehru University, New Delhi, 110067, India.

Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi, 110067, India.

出版信息

Sci Rep. 2017 Aug 29;7(1):9576. doi: 10.1038/s41598-017-09916-5.

DOI:10.1038/s41598-017-09916-5
PMID:28852009
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5574977/
Abstract

Tuning the surface electronic properties of 2D transition metal dichalcogenides such as Molebdenum disulfide (MoS) nanosheets is worth exploring for their potential applications in strain sensitive flexible electronic devices. Here in, the correlation between tensile strain developed in MoS nanosheets during swift heavy ion irradiation and corresponding modifications in their surface electronic properties is investigated. With prior structural characterization by transmission electron microscopy, chemically exfoliated MoS nanosheets were exposed to 100 MeV Ag ion irradiation at varying fluence for creation of controlled defects. The presence of defect induced systematic tensile strain was verified by Raman spectroscopy and X-ray Diffraction analysis. The effect of ion irradiation on in-plane mode is observed to be significantly higher than that on out-of-plane mode. The contribution of irradiation induced in-plane strain on modification of the surface electronic properties of nanosheets was analyzed by work function measurement using scanning Kelvin probe microscopy. The work function value is observed to be linearly proportional to tensile strain along the basal plane indicating a systematic shifting of Fermi surface with fluence towards the valence band.

摘要

调节二维过渡金属二硫属化物（如二硫化钼 (MoS) 纳米片）的表面电子性质对于探索其在应变敏感柔性电子器件中的潜在应用具有重要意义。本研究旨在探索在快速重离子辐照过程中 MoS 纳米片中产生的拉伸应变与表面电子性质的相应变化之间的关系。通过透射电子显微镜进行结构特性分析后，将化学剥离的 MoS 纳米片暴露于 100 MeV Ag 离子辐照下，辐照剂量不同，以产生可控缺陷。拉曼光谱和 X 射线衍射分析证实了缺陷诱导的系统拉伸应变的存在。辐照对平面内模式的影响明显高于对平面外模式的影响。使用扫描 Kelvin 探针显微镜进行功函数测量，分析辐照诱导的平面内应变对纳米片表面电子性质的影响。观察到功函数值与沿基面的拉伸应变呈线性比例关系，表明费米表面随着辐照剂量向价带方向系统地移动。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/67719e2449ae/41598_2017_9916_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/96033dad1911/41598_2017_9916_Fig1_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/c30d6e9bb877/41598_2017_9916_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/073b02b35eea/41598_2017_9916_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/f356a6aca36d/41598_2017_9916_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/67719e2449ae/41598_2017_9916_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/96033dad1911/41598_2017_9916_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/97b162e1786c/41598_2017_9916_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/aac8545da184/41598_2017_9916_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/c30d6e9bb877/41598_2017_9916_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/073b02b35eea/41598_2017_9916_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/f356a6aca36d/41598_2017_9916_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0d8f/5574977/67719e2449ae/41598_2017_9916_Fig7_HTML.jpg

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