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过渡金属二硫属化物纳米片的自锚定范德华堆叠生长

Self-Anchored Van-Der-Waals Stacking Growth of Transition-Metal Dichalcogenide Nanoplates.

作者信息

Jiang Dingding, Tang Ya-Nan, Wang Di, Xu Xiangpeng, Sun Jiang, Ma Rong, Li Wenhao, Han Zhiya, Liu Yunqi, Wei Dacheng

机构信息

State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai, 200433, China.

Laboratory of Molecular Materials and Devices, Fudan University, Shanghai, 200433, China.

出版信息

Adv Mater. 2024 Sep;36(39):e2407586. doi: 10.1002/adma.202407586. Epub 2024 Aug 9.

Abstract

Transition-metal dichalcogenide (TMDs) nanoplates exhibit unique properties different from their monolayer counterparts. Controllable nucleation and growth are prerequisite and highly desirable for their practical applications. Here, a self-anchored van-der-Waals stacking growth method is developed, by which the substrate pit induced by precursor etching anchors the source material, impedes the lateral spreading of source droplets and facilitates the in situ stacking growth of high-quality TMD nanoplates with a thickness of tens to hundreds of nanometers at well-defined locations. As such, an array of TMD nanoplates with controlled lateral dimensions are produced and applied in arrayed photodetectors. This study solves the problem of controllable preparation of TMD nanoplates, holding promise for applications in electronics and optoelectronics.

摘要

过渡金属二硫属化物(TMDs)纳米片展现出与其单层对应物不同的独特性质。可控的成核和生长是其实际应用的前提条件且备受期待。在此,开发了一种自锚定范德华堆叠生长方法,通过前驱体蚀刻诱导的衬底凹坑锚定源材料,阻碍源液滴的横向扩散,并促进高质量TMD纳米片在明确位置原位堆叠生长,其厚度可达数十至数百纳米。据此,制备出了一系列具有可控横向尺寸的TMD纳米片,并将其应用于阵列式光电探测器中。本研究解决了TMD纳米片的可控制备问题,在电子学和光电子学应用方面具有广阔前景。

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