Jensen Nathan, Chen Zhijie Charles, Goldstein Anna Kochnev, Palanker Daniel
Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA.
Department of Ophthalmology and Hansen Experimental Physics Laboratory, Stanford University, Stanford, CA 94305 USA.
bioRxiv. 2025 Feb 11:2024.07.29.605687. doi: 10.1101/2024.07.29.605687.
Modeling of Multi-Electrode Arrays used in neural stimulation can be computationally challenging since it may involve incredibly dense circuits with millions of interconnected resistors, representing current pathways in an electrolyte (resistance matrix), coupled to nonlinear circuits of the stimulating pixels themselves. Here, we present a method for accelerating the modeling of such circuits with minimal error by using a sparse plus low-rank approximation of the resistance matrix.
We prove that thresholding of the resistance matrix elements enables its sparsification with minimized error. This is accomplished with a sorting algorithm, implying efficient O(Nlog(N)) complexity. The eigenvalue-based low-rank compensation then helps achieve greater accuracy without significantly increasing the problem size.
Utilizing these matrix techniques, we reduced the computation time of the simulation of multi-electrode arrays by about 10-fold, while maintaining an average error of less than 0.3% in the current injected from each electrode. We also show a case where acceleration reaches at least 133 times with additional error in the range of 4%, demonstrating the ability of this algorithm to perform under extreme conditions.
Critical improvements in the efficiency of simulations of the electric field generated by multi-electrode arrays presented here enable the computational modeling of high-fidelity neural implants with thousands of pixels, previously impossible.
Computational acceleration techniques described in this manuscript were developed for simulation of high-resolution photovoltaic retinal prostheses, but they are also immediately applicable to any circuits involving dense connections between nodes, and, with modifications, more generally to any systems involving non-sparse matrices.
对用于神经刺激的多电极阵列进行建模在计算上具有挑战性,因为它可能涉及包含数百万个相互连接电阻的极其密集的电路,这些电阻代表电解质中的电流通路(电阻矩阵),并与刺激像素本身的非线性电路耦合。在此,我们提出一种方法,通过对电阻矩阵使用稀疏加低秩近似来以最小误差加速此类电路的建模。
我们证明对电阻矩阵元素进行阈值处理能够以最小误差实现其稀疏化。这通过一种排序算法完成,意味着具有高效的O(Nlog(N))复杂度。基于特征值的低秩补偿随后有助于在不显著增加问题规模的情况下实现更高的精度。
利用这些矩阵技术,我们将多电极阵列模拟的计算时间减少了约10倍,同时每个电极注入电流的平均误差保持在小于0.3%。我们还展示了一个案例,其中加速倍数至少达到133倍,额外误差在4%范围内,证明了该算法在极端条件下的执行能力。
本文提出的多电极阵列产生的电场模拟效率的关键改进使得能够对具有数千个像素的高保真神经植入物进行计算建模,而这在以前是不可能的。
本手稿中描述的计算加速技术是为高分辨率光伏视网膜假体的模拟而开发的,但它们也可立即应用于任何涉及节点间密集连接的电路,并且经过修改后,更普遍地适用于任何涉及非稀疏矩阵的系统。