Pinto-Anwandter Bernardo I, Bassetto Carlos A Z, Latorre Ramon, Bezanilla Francisco
Department of Biochemistry and Molecular Biology, University of Chicago, Chicago, IL, 60637, USA.
These authors contributed equally to this work.
bioRxiv. 2024 Aug 9:2024.08.08.607202. doi: 10.1101/2024.08.08.607202.
Voltage-dependent potassium channels (Kv) are extremely sensitive to membrane voltage and play a crucial role in membrane repolarization during action potentials. Kv channels undergo voltage-dependent transitions between closed states before opening. Despite all we have learned using electrophysiological methods and structural studies, we still lack a detailed picture of the energetics of the activation process. We show here that even a single mutation can drastically modify the temperature response of the Kv channel. Using rapid cell membrane temperature steps (Tsteps), we explored the effects of temperature on the ILT mutant (V369I, I372L, and S376T) and the I384N mutant. The ILT mutant produces a significant separation between the transitions of the voltage sensor domain (VSD) activation and the I384N uncouples its movement from the opening of the domain (PD). ILT and I384N respond to temperature in drastically different ways. In ILT, temperature facilitates the opening of the channel akin to a "hot" receptor, reflecting the temperature dependence of the voltage sensor's last transition and facilitating VSD to PD coupling (electromechanical coupling). In I384N, temperature stabilizes the channel closed configuration analogous to a "cold" receptor. Since I384N drastically uncouples the VSD from the pore opening, we reveal the intrinsic temperature dependence of the PD itself. Here, we propose that the electromechanical coupling has either a "loose" or "tight" conformation. In the loose conformation, the movement of the VSD is necessary but not sufficient to efficiently propagate the electromechanical energy to the S6 gate. In the tight conformation the VSD activation is more effectively translated into the opening of the PD. This conformational switch can be tuned by temperature and modifications of the S4 and S4-S5 linker. Our results show that we can modulate the temperature dependence of Kv channels by affecting its electromechanical coupling.
电压依赖性钾通道(Kv)对膜电压极为敏感,在动作电位期间的膜复极化过程中起着至关重要的作用。Kv通道在开放前会经历依赖电压的从关闭状态到其他状态的转变。尽管我们已经通过电生理方法和结构研究了解了很多,但我们仍然缺乏对激活过程能量学的详细认识。我们在此表明,即使是单个突变也能极大地改变Kv通道的温度响应。通过快速的细胞膜温度阶跃(T阶跃),我们探究了温度对ILT突变体(V369I、I372L和S376T)以及I384N突变体的影响。ILT突变体在电压传感器结构域(VSD)激活转变和I384N突变体将其运动与结构域(PD)开放解偶联之间产生了显著差异。ILT和I384N对温度的响应方式截然不同。在ILT中,温度促进通道开放,类似于一个“热”受体,反映了电压传感器最后转变的温度依赖性,并促进VSD与PD的偶联(机电偶联)。在I384N中,温度稳定通道的关闭构型,类似于一个“冷”受体。由于I384N极大地使VSD与孔道开放解偶联,我们揭示了PD本身固有的温度依赖性。在此,我们提出机电偶联具有“松散”或“紧密”构象。在松散构象中,VSD的运动是必要的,但不足以有效地将机电能量传递到S6门控。在紧密构象中,VSD激活能更有效地转化为PD的开放。这种构象转换可以通过温度以及S4和S4 - S5连接子的修饰来调节。我们的结果表明,我们可以通过影响其机电偶联来调节Kv通道的温度依赖性。