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单片集成高密度垂直有机电化学晶体管阵列及互补电路。

Monolithically integrated high-density vertical organic electrochemical transistor arrays and complementary circuits.

作者信息

Kim Jaehyun, Pankow Robert M, Cho Yongjoon, Duplessis Isaiah D, Qin Fei, Meli Dilara, Daso Rachel, Zheng Ding, Huang Wei, Rivnay Jonathan, Marks Tobin J, Facchetti Antonio

机构信息

Department of Chemistry and Materials Research Center, Northwestern University, Evanston, IL, USA.

Department of Semiconductor Science, Dongguk University, Seoul, Republic of Korea.

出版信息

Nat Electron. 2024 Mar;7(3):234-243. doi: 10.1038/s41928-024-01127-x. Epub 2024 Feb 21.

DOI:10.1038/s41928-024-01127-x
PMID:39155947
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11326712/
Abstract

Organic electrochemical transistors (OECTs) can be used to create biosensors, wearable devices and neuromorphic systems. However, restrictions in the micro- and nanopatterning of organic semiconductors, as well as topological irregularities, often limit their use in monolithically integrated circuits. Here we show that the micropatterning of organic semiconductors by electron-beam exposure can be used to create high-density (up to around 7.2 million OECTs per cm) and mechanically flexible vertical OECT arrays and circuits. The energetic electrons convert the semiconductor exposed area to an electronic insulator while retaining ionic conductivity and topological continuity with the redox-active unexposed areas essential for monolithic integration. The resulting p- and n-type vertical OECT active-matrix arrays exhibit transconductances of 0.08-1.7 S, transient times of less than 100 μs and stable switching properties of more than 100,000 cycles. We also fabricate vertically stacked complementary logic circuits, including NOT, NAND and NOR gates.

摘要

有机电化学晶体管(OECTs)可用于制造生物传感器、可穿戴设备和神经形态系统。然而,有机半导体在微纳图案化方面的限制以及拓扑不规则性,常常限制了它们在单片集成电路中的应用。在此,我们展示了通过电子束曝光对有机半导体进行微图案化可用于制造高密度(每平方厘米高达约720万个OECTs)且具有机械柔性的垂直OECT阵列和电路。高能电子将半导体曝光区域转化为电子绝缘体,同时保持离子导电性以及与单片集成所必需的氧化还原活性未曝光区域的拓扑连续性。由此产生的p型和n型垂直OECT有源矩阵阵列表现出0.08 - 1.7 S的跨导、小于100 μs的瞬态时间以及超过100,000次循环的稳定开关特性。我们还制造了垂直堆叠的互补逻辑电路,包括非门、与非门和或非门。

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