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金属异质结构中的 Rashba-埃德尔斯坦磁阻

Rashba-Edelstein Magnetoresistance in Metallic Heterostructures.

作者信息

Nakayama Hiroyasu, Kanno Yusuke, An Hongyu, Tashiro Takaharu, Haku Satoshi, Nomura Akiyo, Ando Kazuya

机构信息

Department of Applied Physics and Physico-Informatics, Keio University, Yokohama 223-8522, Japan.

PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan.

出版信息

Phys Rev Lett. 2016 Sep 9;117(11):116602. doi: 10.1103/PhysRevLett.117.116602. Epub 2016 Sep 7.

Abstract

We report the observation of magnetoresistance originating from Rashba spin-orbit coupling (SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We show that the simultaneous action of the direct and inverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spin accumulation to the electric resistance. The electric resistance changes with the magnetic-field angle, reminiscent of the spin Hall magnetoresistance, despite the fact that bulk SOC is not responsible for the magnetoresistance. We further found that, even when the magnetization is saturated, the resistance increases with increasing the magnetic-field strength, which is attributed to the Hanle magnetoresistance in this system.

摘要

我们报道了在一种金属异质结构中观察到源自Rashba自旋轨道耦合(SOC)的磁电阻:即Rashba-Edelstein(RE)磁电阻。我们表明,在Bi/Ag/CoFeB三层膜中,直接和逆RE效应的同时作用将电流诱导的自旋积累与电阻耦合起来。尽管体SOC并非磁电阻的成因,但电阻随磁场角度变化,这让人联想到自旋霍尔磁电阻。我们还进一步发现,即使磁化达到饱和,电阻也会随着磁场强度的增加而增大,这归因于该系统中的Hanle磁电阻。

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