Seok Hae-Jun, Lee Doh-Kwon, Kim Han-Ki
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, South Korea.
Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea.
ACS Appl Mater Interfaces. 2024 Sep 11;16(36):47961-47972. doi: 10.1021/acsami.4c12138. Epub 2024 Aug 27.
High-performance flexible Sn-doped InO (indium tin oxide, ITO) electrodes were fabricated using a multicoating process on colorless polyimide (CPI) substrates for flexible perovskite solar cells (FPSCs). The effects of different coating sequences on the electrical, optical, and mechanical properties of the flexible ITO electrodes were thoroughly investigated after preparing them with direct-current magnetron sputtering (DMS) and arc plasma ion plating (APIP). Although both the sputtered ITO (SITO)/arc ion-plated ITO (AITO) film and the AITO/SITO film showed similarly low sheet resistance (18.69-25.29 Ω/sq) and high optical transmittance (94.96-96.85%), the coating sequence significantly affected the mechanical flexibility of the multicoated ITO films. The 120 nm-thick SITO/AITO electrode exhibited small outer and inner critical bending radii (3 mm and 3 mm, respectively) compared to the AITO/SITO electrode (4 and 5 mm, respectively). Owing to better adhesion of the arc-ion-plated ITO bottom layer and the amorphous structure of the top SITO layer, the SITO/AITO electrode exhibited excellent mechanical flexibility and durability. In addition, an FPSC using the SITO/AITO electrode achieved a higher power conversion efficiency (15.09%) than that with the AITO/SITO electrode (13.22%). This improvement was attributed to its high transmittance, low sheet resistance, smooth surface morphology, and enhanced hole collection efficiency. These findings highlight the efficacy of the combined DMS and APIP multicoating process for fabricating high-quality flexible ITO electrodes for high-performance FPSCs.
通过在无色聚酰亚胺(CPI)衬底上采用多层镀膜工艺,制备了用于柔性钙钛矿太阳能电池(FPSC)的高性能柔性掺锡氧化铟(ITO,铟锡氧化物)电极。在用直流磁控溅射(DMS)和电弧等离子体离子镀(APIP)制备柔性ITO电极后,深入研究了不同镀膜顺序对其电学、光学和机械性能的影响。尽管溅射ITO(SITO)/电弧离子镀ITO(AITO)膜和AITO/SITO膜均表现出相似的低方块电阻(18.69 - 25.29 Ω/sq)和高光学透过率(94.96 - 96.85%),但镀膜顺序对多层镀膜ITO膜的机械柔韧性有显著影响。与AITO/SITO电极(分别为4 mm和5 mm)相比,120 nm厚的SITO/AITO电极表现出较小的外临界弯曲半径和内临界弯曲半径(分别为3 mm和3 mm)。由于电弧离子镀ITO底层具有更好的附着力以及顶部SITO层的非晶结构,SITO/AITO电极表现出优异的机械柔韧性和耐久性。此外,使用SITO/AITO电极的FPSC实现了比使用AITO/SITO电极(13.22%)更高的功率转换效率(15.09%)。这种提高归因于其高透过率、低方块电阻、光滑的表面形貌以及增强的空穴收集效率。这些发现突出了DMS和APIP组合多层镀膜工艺在制备用于高性能FPSC的高质量柔性ITO电极方面的有效性。