Yue Lei, Li Zonglun, Yu Linchao, Xu Kunbo, Liu Ran, Li Chenyi, Li Yanchun, Yang Dongliang, Li Xiaodong, Li Quanjun, Liu Bingbing
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
J Am Chem Soc. 2024 Sep 11;146(36):25245-25252. doi: 10.1021/jacs.4c09361. Epub 2024 Aug 28.
The absence of intrinsic p-type 2D layered semiconductors has hampered the development of 2D devices, particularly in complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Developing practical p-type semiconductors and advanced modulation techniques for precise carrier control is paramount to advancing electronic devices and systems. Here, by applying pressure to continuously tune the Peierls distortion in NbOI, we effectively control the polarity and concentration of carriers and significantly enhance its photoelectric properties. The results demonstrate that by suppressing the off-center displacement of Nb atoms along the in-plane direction under pressure, NbOI undergoes a semiconductor-to-semiconductor phase transition from C2 to C2/m, leading to a significant transition from n-type to p-type carrier behavior. Additionally, the gradual inhibition of internal interactions within Nb-Nb dimers along the in-plane direction under high pressure facilitates electron delocalization, substantially enhancing the photoelectric properties. The photocurrent is increased by more than 3 orders of magnitude under xenon irradiation, and the spectral response range is continuously red-shifted and extended to 1450 nm. These findings highlight the potential of pressure engineering to adjust photoelectric properties effectively and flexibly, offering valuable insights for designing high-performance p-type two-dimensional semiconductors.
本征p型二维层状半导体的缺失阻碍了二维器件的发展，尤其是在互补金属氧化物半导体（CMOS）器件和集成电路中。开发实用的p型半导体和先进的调制技术以实现精确的载流子控制对于推进电子器件和系统至关重要。在此，通过施加压力来连续调节NbOI中的佩尔斯畸变，我们有效地控制了载流子的极性和浓度，并显著增强了其光电性能。结果表明，通过在压力下抑制Nb原子沿面内方向的离位，NbOI经历了从C2到C2/m的半导体到半导体的相变，导致从n型到p型载流子行为的显著转变。此外，在高压下沿面内方向对Nb-Nb二聚体内相互作用的逐渐抑制促进了电子离域，大幅增强了光电性能。在氙气照射下，光电流增加了3个多数量级，光谱响应范围不断红移并扩展到1450nm。这些发现突出了压力工程有效且灵活调节光电性能的潜力，为设计高性能p型二维半导体提供了有价值的见解。
