Kwak Kyung Ju, Lee Da Eun, Kim Seung Ju, Jang Ho Won
Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Republic of Korea.
J Phys Chem Lett. 2021 Sep 23;12(37):8999-9010. doi: 10.1021/acs.jpclett.1c02332. Epub 2021 Sep 13.
Halide perovskites have been noted for their exotic properties such as fast ion migration, tunable composition, facile synthetic routes, and flexibility in addition to large light absorption coefficients, long carrier diffusion lengths, and high defect tolerance. These properties have made halide perovskites promising materials for memristors. Applications in the field of resistive switching memory devices and artificial synapses for neuromorphic computing are especially noteworthy. This Perspective covers state-of-the-art perovskite-based memristive devices. Moreover, the fundamental mechanisms and characteristics of perovskite-based memristors are elucidated. Interesting opportunities to improve the performance of perovskite-based memristors for commercialization are provided, including improving film uniformity and air stability, controlling the stoichiometry, finding new all-inorganic and lead-free halide perovskites, and making perovskites into single crystals or quantum dots. We expect our Perspective to be the foundation of realizing next-generation halide perovskite-based memristors.
卤化物钙钛矿因其具有诸如快速离子迁移、可调节成分、简便的合成路线以及柔韧性等奇异特性而备受关注，此外还具有大的光吸收系数、长的载流子扩散长度和高的缺陷容忍度。这些特性使卤化物钙钛矿成为忆阻器的有前景的材料。在电阻式开关存储器件和用于神经形态计算的人工突触领域的应用尤其值得关注。本展望涵盖了基于钙钛矿的忆阻器件的最新进展。此外，还阐明了基于钙钛矿的忆阻器的基本机制和特性。文中提供了一些有趣的机会，以提高基于钙钛矿的忆阻器的性能以实现商业化，包括提高薄膜均匀性和空气稳定性、控制化学计量比、寻找新的全无机和无铅卤化物钙钛矿，以及将钙钛矿制成单晶或量子点。我们期望我们的展望能够成为实现下一代基于卤化物钙钛矿的忆阻器的基础。
