Thapa Gaurab J, Chauhan Mihirsinh, Cranston Rosemary R, Guo Boyu, Lessard Benoît H, Dougherty Daniel B, Amassian Aram
Department of Materials Science and Engineering and Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States.
Department of Physics and Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States.
ACS Appl Mater Interfaces. 2024 Sep 11;16(36):48016-48024. doi: 10.1021/acsami.4c10298. Epub 2024 Aug 30.
Understanding charge transport in conjugated polymers is crucial for the development of next-generation organic electronic applications. It is presumed that structural disorder in conjugated polymers originating from their semicrystallinity, processing, or polymorphism leads to a complex energetic landscape that influences charge carrier transport properties. However, the link between polymer order parameters and energetic landscape is not well established experimentally. In this work, we successfully link statistical surveys of the local polymer electronic structure with paracrystalline structural disorder, a measure of statistical fluctuations away from the ideal polymer packing structure. We use scanning tunneling microscopy/spectroscopy to measure spatial variability in electronic band edges in PM6 films, a high-performance conjugated polymer, and find that films with higher paracrystallinity exhibit greater electronic disorder, as expected. In addition, we show that macroscopic charge carrier mobility in field effect transistors and and trap influence in hole-only diode devices is positively correlated with these microscopic structural and electronic parameters.
了解共轭聚合物中的电荷传输对于下一代有机电子应用的发展至关重要。据推测,共轭聚合物中源于其半结晶性、加工过程或多晶型性的结构无序会导致复杂的能量景观,从而影响电荷载流子的传输特性。然而,聚合物有序参数与能量景观之间的联系在实验上尚未得到很好的确立。在这项工作中,我们成功地将局部聚合物电子结构的统计调查与准晶结构无序联系起来,准晶结构无序是衡量偏离理想聚合物堆积结构的统计波动的一个指标。我们使用扫描隧道显微镜/光谱来测量高性能共轭聚合物PM6薄膜中电子能带边缘的空间变异性,并发现如预期的那样,具有更高准结晶度的薄膜表现出更大的电子无序性。此外,我们表明场效应晶体管中的宏观电荷载流子迁移率以及仅空穴二极管器件中的陷阱影响与这些微观结构和电子参数呈正相关。