Hosen Asif
Department of Materials Science and Engineering, Khulna University of Engineering & Technology (KUET), Khulna, 9203, Bangladesh.
Heliyon. 2024 Aug 6;10(16):e35855. doi: 10.1016/j.heliyon.2024.e35855. eCollection 2024 Aug 30.
This article explores changes in the structural, electronic, elastic, and optical properties of the novel cubic SrBCl (B = As, Sb) with increasing pressure. This research aims to decrease the electronic band gap of SrBCl (B = As, Sb) by applying pressure, with the objective of enhancing the optical properties and evaluating the potential of these compounds for use in optoelectronic applications. It has been revealed that both the lattice parameter and cell volume exhibit a declining pattern as pressure increases. At ambient pressure, analysis of the band structure revealed that both SrAsCl and SrSbCl are direct band gap semiconductors. With increasing pressure up to 25 GPa the electronic band gap of SrAsCl (SrSbCl) reduces from 1.70 (1.72) eV to 0.35 (0.10) eV. However, applying hydrostatic pressure enables the attainment of optimal bandgaps for SrAsCl and SrSbCl, offering theoretical backing for the adjustment of SrBCl (B = As, Sb) perovskite's bandgaps. The electron and hole effective masses in this perovskite exhibit a gradual decrease as pressure rises from 0 to 25 GPa, promoting the conductivity of both electrons and holes. The elastic properties are calculated using the Thermo-PW tool, revealing that they are anisotropic, ductile, mechanically stable, and resistant to plastic deformation. Importantly, these mechanical properties of both compounds are significantly enhanced under pressure. Optical properties, including the absorption and extinction coefficients, dielectric function, refractive index, reflectivity, and loss function, were calculated within the 0-20 eV range under different pressure conditions. The calculated optical properties highlight the versatility and suitability of SrAsCl and SrSbCl perovskites for pressure-tunable optoelectronic devices.
本文探究了新型立方晶系SrBCl(B = As,Sb)在压力增加时其结构、电子、弹性和光学性质的变化。本研究旨在通过施加压力来减小SrBCl(B = As,Sb)的电子带隙,目的是增强光学性质并评估这些化合物在光电子应用中的潜力。研究发现,随着压力增加,晶格参数和晶胞体积均呈现下降趋势。在常压下,对能带结构的分析表明,SrAsCl和SrSbCl均为直接带隙半导体。随着压力增加至25 GPa,SrAsCl(SrSbCl)的电子带隙从1.70(1.72)eV减小至0.35(0.10)eV。然而,施加静水压力能够使SrAsCl和SrSbCl获得最佳带隙,为调整SrBCl(B = As,Sb)钙钛矿的带隙提供了理论支持。随着压力从0增加到25 GPa,这种钙钛矿中的电子和空穴有效质量逐渐减小,促进了电子和空穴的传导。使用Thermo-PW工具计算弹性性质,结果表明它们具有各向异性、延展性、机械稳定性且抗塑性变形。重要的是,在压力作用下,这两种化合物的这些力学性质均得到显著增强。在不同压力条件下,计算了0 - 20 eV范围内的光学性质,包括吸收系数、消光系数、介电函数、折射率、反射率和损耗函数。计算得到的光学性质突出了SrAsCl和SrSbCl钙钛矿在压力可调光电器件方面的多功能性和适用性。