Jia Zhiyan, Zhao Mengfan, Chen Qian, Sun Rong, Cao Lulu, Ye Kun, Zhu Tao, Liu Lixuan, Tian Yuxin, Wang Yi, Du Jie, Zhang Fang, Lv Weiming, Ling FeiFei, Zhai Ya, Jiang Yong, Wang Zhongchang
Institute of Quantum Materials and Devices, School of Materials Science and Engineering, Tiangong University, Tianjin, 300387, China.
International Iberian Nanotechnology Laboratory (INL), Braga, 4715-330, Portugal.
Adv Sci (Weinh). 2024 Nov;11(41):e2405945. doi: 10.1002/advs.202405945. Epub 2024 Sep 4.
Realizing spin transport between heavy metal and two-dimensional (2D) magnetic materials at high Curie temperature (T) is crucial to advanced spintronic information storage technology. Here, environmentally stable 2D nonlayered FeO nanosheets are successfully synthesized using a reproducible process and found that they exhibit vortex magnetic domains at room temperature. A Verwey phase transition temperature (T) of ≈110 K is identified for ≈3 nm thick nanosheet through Raman characterization and spin Hall device measurement of the Pt/FeO bilayer. The anisotropic magnetoresistance ratio decreases near T, while both the spin Hall magnetoresistance ratio and spin mixing conductance (G) increase at T. As the temperature approaches 112 K, the anomalous Hall effect ratio tends to become zero. The maximum G reaches ≈5 × 10 Ωm due to the clean and flat interface between Pt and 2D nanosheet. The observed spin transport behavior in Pt/FeO spin Hall devices indicates that 2D FeO nanosheets possess potential for high-power micro spintronic storage devices applications.
在高居里温度（T）下实现重金属与二维（2D）磁性材料之间的自旋输运对于先进的自旋电子信息存储技术至关重要。在此，通过可重复的过程成功合成了环境稳定的二维非层状FeO纳米片，并发现它们在室温下表现出涡旋磁畴。通过拉曼表征和Pt/FeO双层的自旋霍尔器件测量，确定了约3nm厚纳米片的韦尔维相变温度（T）约为110K。在T附近，各向异性磁阻比降低，而自旋霍尔磁阻比和自旋混合电导（G）在T时均增加。当温度接近112K时，反常霍尔效应比趋于变为零。由于Pt与二维纳米片之间界面干净且平整，最大G达到约5×10Ωm。在Pt/FeO自旋霍尔器件中观察到的自旋输运行为表明，二维FeO纳米片在高功率微自旋电子存储器件应用方面具有潜力。
