Park Sangwook, Choi Yoona, Park Sunwoo, Lee Hayoon, Lee Kiho, Park Jongwook, Jeon Woojin
Integrated Engineering, Department of Chemical Engineering, Kyung Hee University Deogyeong-daero, Giheung-gu Yongin-si Gyeonggi-do 17104 Republic of Korea
Department of Advanced Materials Engineering for Information and Electronics, Integrated Education Program for Frontier Science & Technology (BK21 Four), Kyung Hee University Deogyeong-daero, Giheung-gu Yongin-si Gyeonggi-do 17104 Republic of Korea
RSC Adv. 2024 Sep 10;14(39):28791-28796. doi: 10.1039/d4ra05848h. eCollection 2024 Sep 4.
High dielectric constant (high-) materials play a crucial role in modern electronics, particularly in semiconductor applications such as transistor gate insulators and dielectrics in metal-insulator-metal (MIM) capacitors. However, achieving optimal crystallinity and suppressing interfacial layer formation during deposition processes remain key challenges. To address these challenges, this study introduces a novel approach using atomic layer deposition (ALD) with a new Hf precursor incorporating an iodo ligand. The synthesized precursor, IHf, demonstrates enhanced thermal stability and reactivity, leading to superior film properties. ALD deposition of HfO thin films using IHf yields excellent crystallinity and effectively inhibits interfacial layer formation, resulting in enhanced capacitance density and improved leakage current characteristics in MIM capacitors. Notably, IHf-deposited HfO films exhibit a significant reduction in leakage current, achieving an equivalent oxide thickness of 1.73 nm at a leakage current density of 7.02 × 10 A cm @ +0.8 V. These findings highlight the potential of IHf as a promising precursor for high-performance electronic device fabrication, paving the way for advancements in semiconductor technology.
高介电常数（高κ）材料在现代电子学中起着至关重要的作用，特别是在半导体应用中，如晶体管栅极绝缘体和金属-绝缘体-金属（MIM）电容器中的电介质。然而，在沉积过程中实现最佳结晶度并抑制界面层形成仍然是关键挑战。为了应对这些挑战，本研究引入了一种新颖的方法，即使用带有含碘配体的新型Hf前驱体的原子层沉积（ALD）。合成的前驱体IHf表现出增强的热稳定性和反应活性，从而带来优异的薄膜性能。使用IHf进行HfO薄膜的ALD沉积可产生优异的结晶度，并有效抑制界面层形成，从而提高MIM电容器的电容密度并改善漏电流特性。值得注意的是，用IHf沉积的HfO薄膜的漏电流显著降低，在+0.8 V的漏电流密度为7.02×10⁻⁶ A/cm²时，等效氧化层厚度达到1.73 nm。这些发现突出了IHf作为高性能电子器件制造中有前景的前驱体的潜力，为半导体技术的进步铺平了道路。
