• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于神经形态计算的音频信号刺激多层氧化铪/二氧化钛脉冲神经元网络

Audio Signal-Stimulated Multilayered HfO/TiO Spiking Neuron Network for Neuromorphic Computing.

作者信息

Gao Shengbo, Ma Mingyuan, Liang Bin, Du Yuan, Du Li, Chen Kunji

机构信息

School of Physics, Nanjing University, Nanjing 210093, China.

Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

出版信息

Nanomaterials (Basel). 2024 Aug 29;14(17):1412. doi: 10.3390/nano14171412.

DOI:10.3390/nano14171412
PMID:39269074
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11397374/
Abstract

As the key hardware of a brain-like chip based on a spiking neuron network (SNN), memristor has attracted more attention due to its similarity with biological neurons and synapses to deal with the audio signal. However, designing stable artificial neurons and synapse devices with a controllable switching pathway to form a hardware network is a challenge. For the first time, we report that artificial neurons and synapses based on multilayered HfO/TiO memristor crossbar arrays can be used for the SNN training of audio signals, which display the tunable threshold switching and memory switching characteristics. It is found that tunable volatile and nonvolatile switching from the multilayered HfO/TiO memristor is induced by the size-controlled atomic oxygen vacancy pathway, which depends on the atomic sublayer in the multilayered structure. The successful emulation of the biological neuron's integrate-and-fire function can be achieved through the utilization of the tunable threshold switching characteristic. Based on the stable performance of the multilayered HfO/TiO neuron and synapse, we constructed a hardware SNN architecture for processing audio signals, which provides a base for the recognition of audio signals through the function of integration and firing. Our design of an atomic conductive pathway by using a multilayered TiO/HfO memristor supplies a new method for the construction of an artificial neuron and synapse in the same matrix, which can reduce the cost of integration in an AI chip. The implementation of synaptic functionalities by the hardware of SNNs paves the way for novel neuromorphic computing paradigms in the AI era.

摘要

作为基于脉冲神经网络(SNN)的类脑芯片的关键硬件,忆阻器因其与生物神经元和突触的相似性而在处理音频信号方面备受关注。然而,设计具有可控开关路径以形成硬件网络的稳定人工神经元和突触器件是一项挑战。我们首次报道基于多层HfO/TiO忆阻器交叉阵列的人工神经元和突触可用于音频信号的SNN训练,其具有可调阈值开关和记忆开关特性。研究发现,多层HfO/TiO忆阻器的可调挥发性和非挥发性开关是由尺寸可控的原子氧空位路径诱导的,这取决于多层结构中的原子子层。通过利用可调阈值开关特性可以成功模拟生物神经元的积分发放功能。基于多层HfO/TiO神经元和突触的稳定性能,我们构建了一种用于处理音频信号的硬件SNN架构,这为通过积分和发放功能识别音频信号提供了基础。我们利用多层TiO/HfO忆阻器设计原子导电通路,为在同一矩阵中构建人工神经元和突触提供了一种新方法,这可以降低人工智能芯片中的集成成本。通过SNN硬件实现突触功能为人工智能时代的新型神经形态计算范式铺平了道路。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/1e0ed0104e00/nanomaterials-14-01412-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/2cade08fe27f/nanomaterials-14-01412-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/ea7f7f8bfa9d/nanomaterials-14-01412-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/d38a5d5ef730/nanomaterials-14-01412-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/67cdf8ce478a/nanomaterials-14-01412-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/1e0ed0104e00/nanomaterials-14-01412-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/2cade08fe27f/nanomaterials-14-01412-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/ea7f7f8bfa9d/nanomaterials-14-01412-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/d38a5d5ef730/nanomaterials-14-01412-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/67cdf8ce478a/nanomaterials-14-01412-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/085e/11397374/1e0ed0104e00/nanomaterials-14-01412-g005.jpg

相似文献

1
Audio Signal-Stimulated Multilayered HfO/TiO Spiking Neuron Network for Neuromorphic Computing.用于神经形态计算的音频信号刺激多层氧化铪/二氧化钛脉冲神经元网络
Nanomaterials (Basel). 2024 Aug 29;14(17):1412. doi: 10.3390/nano14171412.
2
Efficient Spiking Neural Networks with Biologically Similar Lithium-Ion Memristor Neurons.具有生物相似性锂离子忆阻器神经元的高效尖峰神经网络。
ACS Appl Mater Interfaces. 2024 Mar 20;16(11):13989-13996. doi: 10.1021/acsami.3c19261. Epub 2024 Mar 5.
3
Artificial Neurons and Synapses Based on Al/a-SiNO:H/P-Si Device with Tunable Resistive Switching from Threshold to Memory.基于具有从阈值到记忆的可调电阻开关的Al/a-SiNO:H/P-Si器件的人工神经元和突触
Nanomaterials (Basel). 2022 Jan 18;12(3):311. doi: 10.3390/nano12030311.
4
HfO /AlO Superlattice-Like Memristive Synapse.HfO/AlO 超晶格类忆阻突触
Adv Sci (Weinh). 2022 Jul;9(21):e2201446. doi: 10.1002/advs.202201446. Epub 2022 May 29.
5
A Temperature Sensory Leaky Integrate-and-Fire Artificial Neuron Based on Chitosan/PNIPAM Bilayer Volatile Complementary Resistive Switching Memristor.基于壳聚糖/PNIPAM 双层挥发性互补阻变开关忆阻器的温度敏感泄露积分触发人工神经元。
Small. 2024 Nov;20(46):e2404177. doi: 10.1002/smll.202404177. Epub 2024 Aug 6.
6
Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network.用于人工神经网络的突触模拟硬件实现的电阻式随机存取存储器。
Sensors (Basel). 2023 Mar 14;23(6):3118. doi: 10.3390/s23063118.
7
Hybrid memristor-CMOS neurons for in-situ learning in fully hardware memristive spiking neural networks.用于全硬件忆阻尖峰神经网络原位学习的混合忆阻器-互补金属氧化物半导体神经元。
Sci Bull (Beijing). 2021 Aug 30;66(16):1624-1633. doi: 10.1016/j.scib.2021.04.014. Epub 2021 Apr 17.
8
Artificial SiN:H Synapse Crossbar Arrays with Gradual Conductive Pathway for High-Accuracy Neuromorphic Computing.具有渐变传导通路的人工氮化硅氢突触交叉阵列用于高精度神经形态计算。
Nanomaterials (Basel). 2023 Aug 18;13(16):2362. doi: 10.3390/nano13162362.
9
Supervised Learning in All FeFET-Based Spiking Neural Network: Opportunities and Challenges.基于全铁电场效应晶体管的脉冲神经网络中的监督学习:机遇与挑战。
Front Neurosci. 2020 Jun 24;14:634. doi: 10.3389/fnins.2020.00634. eCollection 2020.
10
Tunable Resistive Switching Enabled by Malleable Redox Reaction in the Nano-Vacuum Gap.纳米真空间隙中可塑氧化还原反应实现的可调电阻开关
ACS Appl Mater Interfaces. 2019 Jun 12;11(23):20965-20972. doi: 10.1021/acsami.9b02498. Epub 2019 May 30.

本文引用的文献

1
Spike-based dynamic computing with asynchronous sensing-computing neuromorphic chip.基于尖峰的动态计算与异步传感计算神经形态芯片。
Nat Commun. 2024 May 25;15(1):4464. doi: 10.1038/s41467-024-47811-6.
2
Spiking Neural Networks and Their Applications: A Review.脉冲神经网络及其应用:综述
Brain Sci. 2022 Jun 30;12(7):863. doi: 10.3390/brainsci12070863.
3
Evolution of the conductive filament system in HfO-based memristors observed by direct atomic-scale imaging.通过直接原子尺度成像观察到的基于HfO的忆阻器中传导细丝系统的演变。
Nat Commun. 2021 Dec 13;12(1):7232. doi: 10.1038/s41467-021-27575-z.
4
Deep learning in spiking neural networks.深度学习在尖峰神经网络中的应用。
Neural Netw. 2019 Mar;111:47-63. doi: 10.1016/j.neunet.2018.12.002. Epub 2018 Dec 18.
5
A Spiking Neural Network Framework for Robust Sound Classification.一种用于稳健声音分类的脉冲神经网络框架。
Front Neurosci. 2018 Nov 19;12:836. doi: 10.3389/fnins.2018.00836. eCollection 2018.
6
Deep Learning With Spiking Neurons: Opportunities and Challenges.基于脉冲神经元的深度学习:机遇与挑战。
Front Neurosci. 2018 Oct 25;12:774. doi: 10.3389/fnins.2018.00774. eCollection 2018.
7
An electronic synaptic device based on HfOTiO bilayer structure memristor with self-compliance and deep-RESET characteristics.基于 HfOTiO 双层结构忆阻器的具有自顺应和深重置特性的电子突触器件。
Nanotechnology. 2018 Oct 12;29(41):415205. doi: 10.1088/1361-6528/aad64d. Epub 2018 Jul 27.
8
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.高掺杂硅衬底对氮化硅忆阻器的缩放效应。
Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17.
9
Formation of oxygen vacancies and Ti(3+) state in TiO2 thin film and enhanced optical properties by air plasma treatment.通过空气等离子体处理在 TiO2 薄膜中形成氧空位和 Ti(3+) 态,并增强光学性质。
Sci Rep. 2016 Aug 30;6:32355. doi: 10.1038/srep32355.
10
a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths.基于非晶硅氮氢(a-SiNx:H)的具有可调硅悬键传导路径的超低功耗电阻式随机存取存储器。
Sci Rep. 2015 Oct 28;5:15762. doi: 10.1038/srep15762.