An Kyung-Chan, Narasimman Neelakantan, Kim Tony Tae-Hyoung
Centre for Integrated Circuits and Systems, Nanyang Technological University, Singapore 639798, Singapore.
Cirrus Logic, Austin, TX 78701, USA.
Sensors (Basel). 2024 Sep 4;24(17):5755. doi: 10.3390/s24175755.
This work presents a novel ΣΔ analog-to-digital converter (ADC) architecture for a high-resolution sensor interface. The concept is to reduce the effect of kT/C noise generated by the loop filter by placing the gain stage in front of the loop filter. The proposed architecture effectively reduces the kT/C noise power from the loop filter by as much as the squared gain of the added gain stage. The gain stage greatly relaxes the loop filter's sampling capacitor requirements. The target resolution is 20 bit. The sampling frequency is 512 kHz, and the oversampling ratio (OSR) is only 256 for a target resolution. Therefore, the proposed ΔΣ ADC structure allows for high-resolution ADC design in an environment with a limited OSR. The proposed ADC designed in 65 nm CMOS technology operates at supply voltages of 1.2 V and achieves a peak signal-to-noise ratio (SNR) and Schreier Figure of Merit (FoMs) of 117.7 dB and 180.4 dB, respectively.
这项工作提出了一种用于高分辨率传感器接口的新型ΣΔ模数转换器(ADC)架构。其概念是通过将增益级置于环路滤波器之前来降低环路滤波器产生的kT/C噪声的影响。所提出的架构有效地将来自环路滤波器的kT/C噪声功率降低了与所添加增益级的平方增益相同的量。增益级极大地放宽了环路滤波器对采样电容的要求。目标分辨率为20位。采样频率为512 kHz,对于目标分辨率,过采样率(OSR)仅为256。因此,所提出的ΔΣ ADC结构允许在OSR有限的环境中进行高分辨率ADC设计。采用65 nm CMOS技术设计的所提出的ADC在1.2 V电源电压下工作,分别实现了117.7 dB的峰值信噪比(SNR)和180.4 dB的施赖尔品质因数(FoM)。