Lv Xulong, Liang Yanjie, Zhang Yi, Chen Dongxun, Shan Xihui, Wang Xiao-Jun
Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials, Shandong University, Jinan, 250061, China.
Department of Physics, Georgia Southern University, Statesboro, GA, 30460, USA.
Light Sci Appl. 2024 Sep 14;13(1):253. doi: 10.1038/s41377-024-01533-y.
Extensive research has been conducted on visible-light and longer-wavelength infrared-light storage phosphors, which are utilized as promising rewritable memory media for optical information storage applications in dark environments. However, storage phosphors emitting in the deep ultraviolet spectral region (200-300 nm) are relatively lacking. Here, we report an appealing deep-trap ultraviolet storage phosphor, ScBO:Bi, which exhibits an ultra-narrowband light emission centered at 299 nm with a full width at half maximum (FWHM) of 0.21 eV and excellent X-ray energy storage capabilities. When persistently stimulated by longer-wavelength white/NIR light or heated at elevated temperatures, ScBO:Bi phosphor exhibits intense and long-lasting ultraviolet luminescence due to the interplay between defect levels and external stimulus, while the natural decay in the dark at room temperature is extremely weak after X-ray irradiation. The impact of the spectral distribution and illuminance of ambient light and ambient temperature on ultraviolet light emission has been studied by comprehensive experimental and theoretical investigations, which elucidate that both O vacancy and Sc interstitial serve as deep electron traps for enhanced and prolonged ultraviolet luminescence upon continuous optical or thermal stimulation. Based on the unique spectral features and trap distribution in ScBO:Bi phosphor, controllable optical information read-out is demonstrated via external light or heat manipulation, highlighting the great potential of ScBO:Bi phosphor for advanced optical storage application in bright environments.
人们已经对可见光和长波长红外光存储磷光体进行了广泛研究，它们被用作在黑暗环境中进行光信息存储应用的有前景的可重写存储介质。然而，在深紫外光谱区域（200 - 300nm）发光的存储磷光体相对较少。在此，我们报道了一种引人注目的深陷阱紫外存储磷光体ScBO:Bi，它呈现出以299nm为中心的超窄带发光，半高宽（FWHM）为0.21eV，并且具有出色的X射线能量存储能力。当受到长波长白色/近红外光持续刺激或在高温下加热时，由于缺陷能级与外部刺激之间的相互作用，ScBO:Bi磷光体呈现出强烈且持久的紫外发光，而在X射线辐照后，室温下在黑暗中的自然衰减极其微弱。通过全面的实验和理论研究，研究了环境光的光谱分布和照度以及环境温度对紫外光发射的影响，结果表明氧空位和钪间隙都作为深电子陷阱，在连续的光或热刺激下增强并延长紫外发光。基于ScBO:Bi磷光体独特的光谱特征和陷阱分布，通过外部光或热操纵展示了可控的光信息读出，突出了ScBO:Bi磷光体在明亮环境中用于先进光存储应用的巨大潜力。
