Zhang Junwei, Zhao Miao, Hu Qiao, Jiang Renjie, Ruan Hao, Lin Hui
Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, China.
Aerospace Laser Technology and System Department, Wangzhijiang Innovation Center for Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
Materials (Basel). 2024 Dec 27;18(1):63. doi: 10.3390/ma18010063.
Electron-trapping materials have attracted a lot of attention in the field of optical data storage. However, the lack of suitable trap levels has hindered its development and application in the field of optical data storage. Herein, LuAlO:Ce fluorescent ceramics were developed as the optical storage medium, and high-temperature vacuum sintering induced the formation of deep traps (1.36 eV). The matrix based on the garnet-structured material ensures excellent rewritability. By analyzing the thermoluminescence and photostimulable luminescence, it is found that the transition of electrons provided by Ce between the conduction band and trap levels offers the possibility for optical data storage. As evidence of its application, the optical information encoding using 254 nm light and decoding using a light stimulus and thermal stimulus were applied. These findings are expected to provide candidate material for novel optical storage technology, and further promote the development of advanced information storage technology.
电子俘获材料在光数据存储领域引起了广泛关注。然而，缺乏合适的陷阱能级阻碍了其在光数据存储领域的发展和应用。在此，开发了LuAlO:Ce荧光陶瓷作为光存储介质，高温真空烧结诱导形成了深陷阱（1.36 eV）。基于石榴石结构材料的基体确保了优异的可重写性。通过分析热释光和光激励发光，发现Ce提供的电子在导带和陷阱能级之间的跃迁为光数据存储提供了可能性。作为其应用的证据，应用了使用254 nm光进行光学信息编码以及使用光刺激和热刺激进行解码。这些发现有望为新型光存储技术提供候选材料，并进一步推动先进信息存储技术的发展。
