Zhu Wenxuan, Sun Jiacheng, Cheng Yuan, Bai Hua, Han Lei, Wang Yuyan, Song Cheng, Pan Feng
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084,China.
Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing 100084,China.
ACS Nano. 2024 Oct 1;18(39):27009-27015. doi: 10.1021/acsnano.4c09735. Epub 2024 Sep 17.
Magnetic tunneling junctions (MTJs) lie in the core of magnetic random access memory, holding promise in integrating memory and computing to reduce hardware complexity, transition latency, and power consumption. However, traditional MTJs are insensitive to light, limiting their functionality in in-memory sensing─a crucial component for machine vision systems in artificial intelligence applications. Herein, the convergence of magnetic memory with optical sensing capabilities is achieved in the all-two-dimensional (2D) magnetic junction FeGaTe/WSe/FeGaTe, which combines 2D magnetism and optoelectronic properties. The clean intrinsic band gap and prominent photoresponse of interlayer WSe endow the tunneling barrier with optical tunability. The on-off states of junctions and the magnetoresistance can be flexibly controlled by the intensity of the optical signal at room temperature. Based on the optical-tunable magnetoresistance in all-2D magnetic junctions, a machine vision system with the architecture of in-memory sensing and computing is constructed, which possesses high performance in image recognition. Our work exhibits the advantages of 2D magneto-electronic devices and extends the application scenarios of magnetic memory devices in artificial intelligence.
磁性隧道结（MTJs）是磁随机存取存储器的核心，有望将存储与计算集成，以降低硬件复杂度、转换延迟和功耗。然而，传统的MTJs对光不敏感，限制了它们在内存传感中的功能，而内存传感是人工智能应用中机器视觉系统的关键组成部分。在此，通过全二维（2D）磁性结FeGaTe/WSe/FeGaTe实现了磁存储与光学传感能力的融合，该结结合了二维磁性和光电特性。层间WSe的纯净本征带隙和显著的光响应赋予了隧道势垒光学可调性。在室温下，结的开/关状态和磁电阻可以通过光信号的强度灵活控制。基于全二维磁性结中的光学可调磁电阻，构建了具有内存传感和计算架构的机器视觉系统，该系统在图像识别方面具有高性能。我们的工作展示了二维磁电子器件的优势，并扩展了磁存储器件在人工智能中的应用场景。
