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用于增强突触特性的氧等离子体处理的Al/TaO/Al电阻式存储器。

Oxygen-Plasma-Treated Al/TaO/Al Resistive Memory for Enhanced Synaptic Characteristics.

作者信息

Kim Gyeongpyo, Park Seoyoung, Koo Minsuk, Kim Sungjun

机构信息

Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Department of AI Semiconductor, School of Advanced Cross-Disciplinary Studies, University of Seoul, Seoul 02504, Republic of Korea.

出版信息

Biomimetics (Basel). 2024 Sep 23;9(9):578. doi: 10.3390/biomimetics9090578.

DOI:10.3390/biomimetics9090578
PMID:39329600
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11430571/
Abstract

In this study, we investigate the impact of O plasma treatment on the performance of Al/TaO/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 10 s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device.

摘要

在本研究中，我们研究了氧等离子体处理对基于Al/TaO/Al的电阻式随机存取存储器（RRAM）器件性能的影响，重点关注其在神经形态系统中的应用。使用扫描电子显微镜和X射线光电子能谱进行的对比分析证实了经氧等离子体处理和未经处理的RRAM单元在化学成分上的差异。直流测量表明，经氧等离子体处理的RRAM单元相较于未经处理的RRAM单元有显著改善，包括更高的开/关比、更好的均匀性和分布、更长的保持时间以及更高的耐久性。通过电流-电压（I-V）曲线拟合研究了传导机制。此外，利用部分短期记忆观察到了双脉冲易化（PPF）。此外，通过自动脉冲调谐算法实现了3位和4位权重调谐，以提高神经形态系统中突触权重的可控性，在多种状态下保持时间超过10秒。使用MNIST数据集进行神经形态模拟以评估突触器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/ad63ae126b9f/biomimetics-09-00578-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/75f4832aa604/biomimetics-09-00578-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/1c73df2299a3/biomimetics-09-00578-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/b8260ef114b4/biomimetics-09-00578-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/7aa64c88dc6f/biomimetics-09-00578-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/51256750ea78/biomimetics-09-00578-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/2c93f7dda24e/biomimetics-09-00578-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/ad63ae126b9f/biomimetics-09-00578-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/75f4832aa604/biomimetics-09-00578-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/1c73df2299a3/biomimetics-09-00578-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/b8260ef114b4/biomimetics-09-00578-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/7aa64c88dc6f/biomimetics-09-00578-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/51256750ea78/biomimetics-09-00578-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/2c93f7dda24e/biomimetics-09-00578-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8d6f/11430571/ad63ae126b9f/biomimetics-09-00578-g007.jpg

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本文引用的文献

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Implementation of Artificial Synapse Using IGZO-Based Resistive Switching Device.基于铟镓锌氧化物（IGZO）电阻式开关器件的人工突触实现
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Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance State.
经氧等离子体处理的转变细丝及改善的电阻状态
Nanomaterials (Basel). 2022 Aug 7;12(15):2716. doi: 10.3390/nano12152716.
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