• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利：CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法，用中文像聊天一样搜索，搜遍4000万医学文献。AI智能推荐，让科研检索更轻松。

立即免费搜索

文件翻译

保留排版，准确专业，支持PDF/Word/PPT等文件格式，支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述，25分钟生成高质量综述，智能提取关键信息，辅助科研写作。

立即免费体验

石墨烯和碳纳米管中氮缺陷的形成、结构、电子及输运性质

Formation, Structure, Electronic, and Transport Properties of Nitrogen Defects in Graphene and Carbon Nanotubes.

作者信息

Fujimoto Yoshitaka

机构信息

Graduate School of Engineering, Kyushu University, Fukuoka 819-0395, Japan.

出版信息

Micromachines (Basel). 2024 Sep 22;15(9):1172. doi: 10.3390/mi15091172.

DOI:10.3390/mi15091172
PMID:39337832
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11434441/
Abstract

The substitutional doping of nitrogen is an efficient way to modulate the electronic properties of graphene and carbon nanotubes (CNTs). Therefore, it could enhance their physical and chemical properties as well as offer potential applications. This paper provides an overview of the experimental and theoretical investigations regarding nitrogen-doped graphene and CNTs. The formation of various nitrogen defects in nitrogen-doped graphene and CNTs, which are identified by several observations, is reviewed. The electronic properties and transport characteristics for nitrogen-doped graphene and CNTs are also reviewed for the development of high-performance electronic device applications.

摘要

氮的取代掺杂是调节石墨烯和碳纳米管（CNT）电子性质的有效方法。因此，它可以增强它们的物理和化学性质，并提供潜在的应用。本文概述了关于氮掺杂石墨烯和碳纳米管的实验和理论研究。综述了通过多种观察手段确定的氮掺杂石墨烯和碳纳米管中各种氮缺陷的形成情况。还综述了氮掺杂石墨烯和碳纳米管的电子性质及输运特性，以用于高性能电子器件应用的开发。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/635e60187b68/micromachines-15-01172-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/aa4a879dae5c/micromachines-15-01172-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/dea394dc8aa1/micromachines-15-01172-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/207dec4000cd/micromachines-15-01172-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/d0b821e4da3f/micromachines-15-01172-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/1192a44b883e/micromachines-15-01172-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/635e60187b68/micromachines-15-01172-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/aa4a879dae5c/micromachines-15-01172-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/dea394dc8aa1/micromachines-15-01172-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/207dec4000cd/micromachines-15-01172-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/d0b821e4da3f/micromachines-15-01172-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/1192a44b883e/micromachines-15-01172-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6a18/11434441/635e60187b68/micromachines-15-01172-g006.jpg

相似文献

1
Formation, Structure, Electronic, and Transport Properties of Nitrogen Defects in Graphene and Carbon Nanotubes.石墨烯和碳纳米管中氮缺陷的形成、结构、电子及输运性质
Micromachines (Basel). 2024 Sep 22;15(9):1172. doi: 10.3390/mi15091172.
2
Substitutional doping of carbon nanotubes with heteroatoms and their chemical applications.用杂原子对碳纳米管进行替代掺杂及其化学应用。
ChemSusChem. 2014 May;7(5):1240-50. doi: 10.1002/cssc.201301166. Epub 2014 Mar 27.
3
Effect of the Dopant Configuration on the Electronic Transport Properties of Nitrogen-Doped Carbon Nanotubes.掺杂构型对氮掺杂碳纳米管电子输运性质的影响。
Nanomaterials (Basel). 2022 Jan 7;12(2):199. doi: 10.3390/nano12020199.
4
Effect of N/B doping on the electronic and field emission properties for carbon nanotubes, carbon nanocones, and graphene nanoribbons.N/B 掺杂对碳纳米管、碳纳米角和石墨烯纳米带的电子和场发射性能的影响。
Nanoscale. 2010 Jul;2(7):1069-82. doi: 10.1039/c0nr00002g. Epub 2010 May 11.
5
Chemically Conjugated Carbon Nanotubes and Graphene for Carrier Modulation.用于载体调控的化学共轭碳纳米管和石墨烯
Acc Chem Res. 2016 Mar 15;49(3):390-9. doi: 10.1021/acs.accounts.5b00441. Epub 2016 Feb 15.
6
Electronic interaction between nitrogen atoms in doped graphene.掺杂石墨烯中氮原子的电子相互作用。
ACS Nano. 2015 Jan 27;9(1):670-8. doi: 10.1021/nn506074u. Epub 2015 Jan 9.
7
Is it possible to dope single-walled carbon nanotubes and graphene with sulfur?是否有可能用硫对单壁碳纳米管和石墨烯进行掺杂？
Chemphyschem. 2009 Mar 9;10(4):715-22. doi: 10.1002/cphc.200800592.
8
One-Step Chemical Vapor Deposition Synthesis of 3D N-doped Carbon Nanotube/N-doped Graphene Hybrid Material on Nickel Foam.一步化学气相沉积法在泡沫镍上合成三维氮掺杂碳纳米管/氮掺杂石墨烯杂化材料
Nanomaterials (Basel). 2018 Sep 7;8(9):700. doi: 10.3390/nano8090700.
9
Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene.氮掺杂石墨烯中电荷输运的电子空穴对称破缺。
ACS Nano. 2017 May 23;11(5):4641-4650. doi: 10.1021/acsnano.7b00313. Epub 2017 May 4.
10
First-principles computational investigation of nitrogen-doped carbon nanotubes as anode materials for lithium-ion and potassium-ion batteries.氮掺杂碳纳米管作为锂离子和钾离子电池负极材料的第一性原理计算研究
RSC Adv. 2019 Jun 3;9(30):17299-17307. doi: 10.1039/c9ra03235e. eCollection 2019 May 29.

本文引用的文献

1
Theoretical and experimental investigations of enhanced carbon nanotube-gold interface conductivity through nitrogen doping.
Nanoscale. 2023 Dec 21;16(1):249-261. doi: 10.1039/d3nr04588a.
2
Carbon nanotube transistors: Making electronics from molecules.碳纳米管晶体管：从分子制造电子器件。
Science. 2022 Nov 18;378(6621):726-732. doi: 10.1126/science.abp8278. Epub 2022 Nov 17.
3
Ultrasensitive N-Channel Graphene Gas Sensors by Nondestructive Molecular Doping.通过无损分子掺杂实现的超灵敏N沟道石墨烯气体传感器
ACS Nano. 2022 Feb 22;16(2):2176-2187. doi: 10.1021/acsnano.1c08186. Epub 2022 Feb 3.
4
N-doped reduced graphene oxide for room-temperature NO gas sensors.用于室温NO气体传感器的氮掺杂还原氧化石墨烯
Sci Rep. 2021 Oct 20;11(1):20719. doi: 10.1038/s41598-021-99883-9.
5
Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics.用于高性能电子学的对准、高密度半导体碳纳米管阵列。
Science. 2020 May 22;368(6493):850-856. doi: 10.1126/science.aba5980.
6
Quality Improvement of Few-Layers Defective Graphene from Biomass and Application for H Generation.基于生物质的少层缺陷石墨烯的质量提升及其在制氢中的应用
Nanomaterials (Basel). 2019 Jun 19;9(6):895. doi: 10.3390/nano9060895.
7
Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes.共价原子桥实现了对齐碳纳米管中电子传输的单向增强。
ACS Appl Mater Interfaces. 2019 May 29;11(21):19315-19323. doi: 10.1021/acsami.9b01400. Epub 2019 May 14.
8
Carbon Nanotube Chemical Sensors.碳纳米管化学传感器。
Chem Rev. 2019 Jan 9;119(1):599-663. doi: 10.1021/acs.chemrev.8b00340. Epub 2018 Sep 18.
9
Scaling carbon nanotube complementary transistors to 5-nm gate lengths.将碳纳米管互补晶体管缩放至 5nm 栅长。
Science. 2017 Jan 20;355(6322):271-276. doi: 10.1126/science.aaj1628.
10
Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs.具有超过硅和砷化镓电流密度的准弹道碳纳米管阵列晶体管。
Sci Adv. 2016 Sep 2;2(9):e1601240. doi: 10.1126/sciadv.1601240. eCollection 2016 Sep.