Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China.
Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China.
Science. 2020 May 22;368(6493):850-856. doi: 10.1126/science.aba5980.
Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide-semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz.
单壁碳纳米管 (CNT) 可实现小于 10 纳米的集成电路制造，但这需要在晶圆上可扩展地生产密集且电子纯度高的半导体纳米管阵列。我们开发了一种多次分散和分类的工艺，从而获得极高的半导体纯度，以及一种维度限制的自对准 (DLSA) 工艺，用于制备具有可调密度（每微米 100 至 200 根 CNT）且对准度良好（9 度以内）的 CNT 阵列。在 CNT 阵列上制造的顶栅场效应晶体管 (FET) 的性能优于具有类似栅长的商用硅金属氧化物半导体 FET，特别是在 1 伏电源下的导通电流为 1.3 毫安每微米，记录的跨导为 0.9 毫西门子每微米，同时使用离子液体栅保持低温室温亚阈值摆幅 <90 毫伏每 decade。批量制造的顶栅五阶环形振荡器表现出的最高最大振荡频率 >80GHz。
