Bonavolontà Carmela, Vettoliere Antonio, Pannico Marianna, Crisci Teresa, Ruggiero Berardo, Silvestrini Paolo, Valentino Massimo
CNR-ISASI, Institute of Applied Sciences and Intelligent Systems, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy.
CNR-IPCB, Institute of Polymers, Composites and Biomaterials, Via Campi Flegrei 34, I-80078 Pozzuoli, Italy.
Sensors (Basel). 2024 Sep 19;24(18):6068. doi: 10.3390/s24186068.
Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device's performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer's quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.
由于能够通过光与物质的相互作用将光信号转换为电信号，光电探测器在多种技术应用中备受关注。特别是，基于石墨烯/硅异质结的宽带光电探测器因其出色的性能可用于多种应用。在此，我们展示了一种基于沉积在p型和n型硅衬底上的单层石墨烯的二维光电二极管异质结。我们报告了该器件在400纳米至800纳米光谱范围内的暗态和亮态条件下测量的电光特性。给出了该器件在响应度和整流比方面性能的比较。拉曼光谱提供了关于单层石墨烯质量和氧化的信息。结果表明了硅衬底掺杂对于实现高效异质结以改善光响应、降低暗电流的重要性。
