Zhong Weiheng, Liu Yuqing, Huang Hong, Sun Zhaojie, Xin Wei, Liu Weizhen, Zhao Xiaolong, Long Shibing, Xu Haiyang
Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, China.
School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.
Nano Lett. 2024 Oct 30;24(43):13769-13774. doi: 10.1021/acs.nanolett.4c04030. Epub 2024 Sep 28.
Low-dimensional GaO demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional GaO photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin GaO layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional GaO photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin GaO shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin GaO in UV optoelectronics.
低维氧化镓展现出独特的紫外光响应特性，可应用于各种电子和光学系统。然而，低维氧化镓光电探测器面临着制备工艺复杂和器件性能不佳的挑战。在这项工作中，通过对液态镓进行紫外线照射，在石英棒上制备出了厚度约为7纳米的超薄氧化镓层。受益于紫外线照射消除的低密度氧空位缺陷，低维氧化镓光电探测器展现出高响应速度（上升时间：64.7微秒；下降时间：51.4微秒）以及高达120分贝的出色线性动态范围。此外，基于这些超薄氧化镓的光电探测器阵列通过监测紫外光源运动展现出有效的轨迹跟踪能力。这项工作开发了一种简单的制备方法，用以构建具有快速响应和实用轨迹跟踪能力的低维紫外光电探测器阵列，彰显了超薄氧化镓在紫外光电子学中的重要意义。
