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《-GaO 薄膜综述：制备与光电性能》

A Review of -GaO Films: Fabrications and Photoelectric Properties.

作者信息

Wang Siwei, Jian Jie, Xu Cong, Dong Xiaoheng, Yang Jielong, Zou Maolin, Liu Wangwang, Tu Qinglong, Li Mengyao, Cao Cheng, Liu Xiangli

机构信息

School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China.

Institute of Special Environments Physical Sciences, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China.

出版信息

Materials (Basel). 2025 Jun 4;18(11):2630. doi: 10.3390/ma18112630.

DOI:10.3390/ma18112630
PMID:40508628
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC12156418/
Abstract

Gallium oxide (GaO), as an ultra-wide bandgap semiconducting material, has attracted extensive research interest in recent years. Owing to its outstanding electrical and optical properties, as well as its high reliability, GaO shows great potential in power electronics, optoelectronics, memory devices, and so on. Among all the different polymorphs, -GaO is the second most thermally stable phase. It has a hexagonal crystal structure, which contributes to its isotropic physical properties and its suitable growth on low-cost commercial substrates, such as AlO, Si (111). However, there are far fewer research works on -GaO in comparison with the most thermally stable β phase. Aiming to provide a comprehensive view on the current works of -GaO and support future research, this review conducts detailed summarizations for the fabrication processes of -GaO thin films and the photoelectrical properties of -GaO-based photodetectors. The effects of different deposition parameters on film phases and qualities are discussed. The forming mechanisms of phase prepared by chemical vapor depositions (CVDs) and physical vapor depositions (PVDs) are analyzed, respectively. Conclusions are made concerning the relationships between film microstructures and properties. In addition, strategies for further improving -GaO film performance are briefly summarized.

摘要

氧化镓（GaO）作为一种超宽带隙半导体材料，近年来引起了广泛的研究兴趣。由于其优异的电学和光学性能以及高可靠性，氧化镓在功率电子学、光电子学、存储器件等领域展现出巨大潜力。在所有不同的多晶型物中，-GaO是热稳定性第二高的相。它具有六方晶体结构，这使其具有各向同性的物理性质，并适合在低成本商业衬底（如AlO、Si(111)）上生长。然而，与热稳定性最高的β相相比，关于-GaO的研究工作要少得多。为了全面了解-GaO的当前研究工作并支持未来研究，本综述对-GaO薄膜的制备工艺以及基于-GaO的光电探测器的光电性能进行了详细总结。讨论了不同沉积参数对薄膜相和质量的影响。分别分析了通过化学气相沉积（CVD）和物理气相沉积（PVD）制备相的形成机制。得出了关于薄膜微观结构与性能之间关系的结论。此外，还简要总结了进一步提高-GaO薄膜性能的策略。

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Bandgap Engineering and Oxygen Vacancy Defect Electroactivity Inhibition in Highly Crystalline N-Alloyed GaO Films through Plasma-Enhanced Technology.通过等离子体增强技术实现高结晶度 N 掺杂 GaO 薄膜的带隙工程与氧空位缺陷电活性抑制
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Nature. 2019 Sep;573(7775):507-518. doi: 10.1038/s41586-019-1573-9. Epub 2019 Sep 25.
10
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