Chang Wei-Chih, Cheng Anqi, Gao Yangjun, Xu Feiya, Li Xu, Wu Yaping, Wu Zhiming, Kang Junyong
Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China.
J Phys Condens Matter. 2024 Oct 23;37(2). doi: 10.1088/1361-648X/ad81a4.
The combination of antiferromagnetism and topological properties in MnX (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of MnGa thin films on SiO(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick MnGa films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) MnGa(002) phase from the relatively thin MnGa films after annealing at 773 K. The investigation of the growth mechanism of MnGa polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.
MnX（X = Sn、Ge、Ga）中反铁磁性与拓扑性质的结合为探索新型自旋相关现象和开发创新型自旋电子器件提供了一个独特的平台。在此，我们系统地研究了SiO(001)/Si衬底上MnGa薄膜在各种生长参数（如籽晶层结构、退火条件和薄膜厚度）下的相变。用Ru籽晶生长的相对较厚的MnGa薄膜呈现出多种多晶六方相，包括(002)和(201)。在传统的Ru籽晶层中添加Ta层，可促进在773 K退火后相对较薄的MnGa薄膜形成近乎单晶的反铁磁（AF）MnGa(002)相。对MnGa多晶薄膜生长机制的研究为探索基于Mn的AF自旋电子器件提供了一种参考策略。
