He Jiayi, Chen Qianxin, Wu Yiwei, Tan Congbing, Zhong Xiangli, Song Hongjia, Ma Ming, Li Yunlong, Ouyang Xiaoping, Wang Jinbin, Zhong Gaokuo
National-Provincial Laboratory of Special Function Thin Film Materials, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, Guangdong, China.
Nano Lett. 2024 Oct 9;24(40):12426-12432. doi: 10.1021/acs.nanolett.4c02961. Epub 2024 Oct 1.
Negative capacitance effects with fast response times hold great potential for reducing the power consumption in high-frequency nanoelectronics. Nevertheless, the negative capacitance effect faces considerable complexity arising from the dynamic interplay among electrostatic, nucleation energies, and domain evolution. This intricate balance poses a formidable challenge to achieving fast negative capacitance. Herein, we have achieved a fast negative capacitance time of ∼16.23 ns in PbZrTiO (PZT) thin film, and our investigation confirms the presence of acicular ferroelastic domains within the PZT thin film. Under reversal electric fields, these acicular ferroelastic domains undergo a unique flipping process, transitioning through domain expansion and contraction. This distinct domain flipping manner accelerates the nucleation and growth of ferroelectric domains, thereby facilitating the observed fast negative capacitance. The realization of fast negative capacitance holds substantial promise for reducing operational time and power consumption, offering prospects for the design of nanoelectronics with significantly lower power requirements.
具有快速响应时间的负电容效应在降低高频纳米电子学功耗方面具有巨大潜力。然而，负电容效应面临着由静电、成核能量和畴演化之间的动态相互作用所产生的相当大的复杂性。这种复杂的平衡对实现快速负电容构成了巨大挑战。在此，我们在PbZrTiO（PZT）薄膜中实现了约16.23 ns的快速负电容时间，并且我们的研究证实了PZT薄膜中存在针状铁弹畴。在反向电场下，这些针状铁弹畴经历独特的翻转过程，通过畴的扩张和收缩进行转变。这种独特的畴翻转方式加速了铁电畴的成核和生长，从而促成了所观察到的快速负电容。快速负电容的实现对于减少操作时间和功耗具有重大前景，为设计功率需求显著更低的纳米电子学提供了希望。
