Liu Hui-Ting, Chen Wan-Hsin, Chang Shu-Jui, Yang Chueh-Cheng, Wang Chia-Hsin, Liu Wei-Tung, Chen Kuan-Yu, Kawakami Naoya, Lin Kuan-Bo, Lin Chun-Liang, Hu Chenming
International College of Semiconductor Technology, Hsinchu 300093, Taiwan.
Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
ACS Appl Mater Interfaces. 2024 Oct 7;16(41):56336-42. doi: 10.1021/acsami.4c11506.
Transition metal dichalcogenides (TMDs) are 2D materials in which the layers are stacked together by van der Waals forces. Although TMDs are expected to be promising for electronic applications, forming a uniform electrode on them is challenging because of the low adhesion forces between metals and TMDs. This study focuses on improving the quality of metal electrodes by introducing atomic H to create surface defects, using Ni on WS as an example. The detailed effects of H etching and subsequent Ni growth were investigated using scanning tunneling microscopy (STM) and synchrotron-based X-ray photoemission (XPS) techniques. Our studies reveal that introducing point defects of ∼3.05 × 10 cm on the WS surface, results in a significant shift in Ni growth from the Volmer-Weber to a near Frank-van der Merwe mode. The origin of the change is the bond formation between the Ni and W atoms, which is expected to realize ohmic contact. The optimization of metal-TMD interfaces offers valuable insights for advanced applications.
过渡金属二硫属化物（TMDs）是二维材料，其各层通过范德华力堆叠在一起。尽管TMDs有望在电子应用中发挥作用，但由于金属与TMDs之间的附着力较低，在其上形成均匀的电极具有挑战性。本研究以WS上的Ni为例，通过引入原子H以产生表面缺陷，着重于提高金属电极的质量。使用扫描隧道显微镜（STM）和基于同步加速器的X射线光电子能谱（XPS）技术研究了H蚀刻及随后的Ni生长的详细影响。我们的研究表明，在WS表面引入约3.05×10 cm的点缺陷，会导致Ni的生长模式从伏尔默-韦伯模式显著转变为接近弗兰克-范德梅韦模式。这种变化的根源是Ni与W原子之间形成的键，有望实现欧姆接触。金属-TMD界面的优化为先进应用提供了有价值的见解。
