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通过密度泛函理论(DFT)计算分析InGeX(X = Br)钙钛矿的结构、光电和热电性能。

Analyzing the structural, optoelectronic, and thermoelectric properties of InGeX (X = Br) perovskites via DFT computations.

作者信息

Abdullah Danish, Gupta Dinesh C

机构信息

Condensed Matter Theory Group, School of Studies in Physics, Jiwaji University, Gwalior, 474011, India.

出版信息

Sci Rep. 2024 Oct 9;14(1):23575. doi: 10.1038/s41598-024-72745-w.

DOI:10.1038/s41598-024-72745-w
PMID:39384903
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11464498/
Abstract

The Electronic and optical properties of InGeX(X = Cl, Br) were examined by adopting the density functional theory (DFT) approach. We applied the GGA + Trans-Blaha modified Becke-Johnson (TB-mBJ) technique to acquire the precise bandgap of 1.52 and 0.98 eV of the compounds InGeX(X = Cl, Br) respectively which suggests the direct bandgap at (M-M). The stability of the material is confirmed by the formation energy (- 2.83 = Cl; - 2.35 = Br) and Mechanical stability. Primarily elastic constants were extracted for each of the materials under scrutiny, and these values then served to gauge all of the materials' mechanical properties. The assessed Poisson's and Pugh's ratios for the materials InGeCl and InGeBr were verified to identify the degree of ductility. The quasi-harmonic Debye model additionally covers the temperature and pressure dependence on thermodynamic parameters, particularly volume, specific heat capacity (Cv) at constant volume, and the Gruneisen parameter (γ) in the range of 0-800 K and 0-5 GPa. It is anticipated that InGeCl and InGeBr will have static dielectric constants of 4.01 and 5.74, respectively. InGeX3(X = Cl, Br) also reveals significant absorption in the high UV spectrum. The thermoelectric properties have also been calculated vdata-element-id="9QNfR3VHbcMHX_W0fJCYp" data-element-type="html" style="display: initial; visibility: initial; opacity: initial; clip-path: initial; position: relative; float: left; top: 0px; left: 0px; z-index: 1 !important; pointer-events: none;" />ia boltztrap2 code using a k mesh of around 1,50,000 points.

摘要

采用密度泛函理论(DFT)方法研究了InGeX(X = Cl,Br)的电子和光学性质。我们应用广义梯度近似(GGA)+ Trans-Blaha修正的贝克-约翰逊(TB-mBJ)技术,分别获得了化合物InGeX(X = Cl,Br)精确的带隙,分别为1.52和0.98 eV,这表明在(M-M)处为直接带隙。材料的稳定性通过形成能(-2.83 = Cl;-2.35 = Br)和力学稳定性得到证实。首先提取了每种受研究材料的弹性常数,然后这些值用于评估所有材料的力学性能。通过评估InGeCl和InGeBr材料的泊松比和普格比来确定其延展性程度。准谐德拜模型还涵盖了温度和压力对热力学参数的依赖性,特别是在0 - 800 K和0 - 5 GPa范围内的体积、定容比热容(Cv)和格林艾森参数(γ)。预计InGeCl和InGeBr的静态介电常数分别为4.01和5.74。InGeX3(X = Cl,Br)在高紫外光谱中也显示出显著吸收。还使用约150,000个点的k网格通过boltztrap2代码计算了热电性能。

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