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磁电CrO薄膜的反铁磁纳米级位阵列

Antiferromagnetic Nanoscale Bit Arrays of Magnetoelectric CrO Thin Films.

作者信息

Rickhaus Peter, Pylypovskyi Oleksandr V, Seniutinas Gediminas, Borras Vicent, Lehmann Paul, Wagner Kai, Žaper Liza, Prusik Paulina J, Makushko Pavlo, Veremchuk Igor, Kosub Tobias, Hübner René, Sheka Denis D, Maletinsky Patrick, Makarov Denys

机构信息

Qnami AG, Hofackerstrasse 40 B, CH-4132 Muttenz, Switzerland.

Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.

出版信息

Nano Lett. 2024 Oct 23;24(42):13172-13178. doi: 10.1021/acs.nanolett.4c03044. Epub 2024 Oct 10.

Abstract

Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100 nm-thick magnetoelectric CrO films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way toward the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.

摘要

氧化物反铁磁体(AFM)的磁性已在单晶和外延薄膜中得到研究。AFM纳米结构的特性仍未得到充分探索。在此,我们报告了直径范围从500纳米到100纳米的圆形颗粒状100纳米厚磁电CrO薄膜的制备及其磁成像。随着横向尺寸的变化,畴结构从较大尺寸的多畴状态演变为最小尺寸的单畴状态。基于自旋 - 晶格模拟,我们表明颗粒状AFM位中畴图案形成的物理过程主要由冷却时的能量耗散决定,这导致位的AFM畴壁运动和排出。我们的结果为制造单畴AFM位图案化存储器件以及探索AFM纳米结构与其几何形状之间的相互作用提供了一条途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/06a1/11503818/b07df1626405/nl4c03044_0001.jpg

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