Department of Physics , University of Basel , Klingelbergstrasse 82 , Basel CH-4056 , Switzerland.
Helmholtz-Zentrum Dresden-Rossendorf e.V. , Institute of Ion Beam Physics and Materials Research , 01328 Dresden , Germany.
Nano Lett. 2019 Mar 13;19(3):1682-1687. doi: 10.1021/acs.nanolett.8b04681. Epub 2019 Feb 12.
Antiferromagnets have recently emerged as attractive platforms for spintronics applications, offering fundamentally new functionalities compared with their ferromagnetic counterparts. Whereas nanoscale thin-film materials are key to the development of future antiferromagnetic spintronic technologies, existing experimental tools tend to suffer from low resolution or expensive and complex equipment requirements. We offer a simple, high-resolution alternative by addressing the ubiquitous surface magnetization of magnetoelectric antiferromagnets in a granular thin-film sample on the nanoscale using single-spin magnetometry in combination with spin-sensitive transport experiments. Specifically, we quantitatively image the evolution of individual nanoscale antiferromagnetic domains in 200 nm thin films of CrO in real space and across the paramagnet-to-antiferromagnet phase transition, finding an average domain size of 230 nm, several times larger than the average grain size in the film. These experiments allow us to discern key properties of the CrO thin film, including the boundary magnetic moment density, the variation of critical temperature throughout the film, the mechanism of domain formation, and the strength of exchange coupling between individual grains comprising the film. Our work offers novel insights into the magnetic ordering mechanism of CrO and firmly establishes single-spin magnetometry as a versatile and widely applicable tool for addressing antiferromagnetic thin films on the nanoscale.
反铁磁体最近作为自旋电子学应用的有吸引力的平台出现,与铁磁体相比提供了全新的功能。虽然纳米级薄膜材料是未来反铁磁自旋电子技术发展的关键,但现有的实验工具往往存在分辨率低或设备要求昂贵复杂的问题。我们通过在纳米尺度上使用单自旋磁强计结合自旋敏感输运实验,解决了磁性电反铁磁体在颗粒状薄膜样品中普遍存在的表面磁化问题,提供了一种简单、高分辨率的替代方案。具体来说,我们定量地在 CrO 200nm 薄膜中成像了单个纳米级反铁磁畴的演化,并在顺磁到反铁磁相变过程中进行了成像,发现平均畴尺寸为 230nm,比薄膜中的平均晶粒尺寸大几倍。这些实验使我们能够分辨 CrO 薄膜的关键特性,包括边界磁矩密度、整个薄膜中临界温度的变化、畴形成的机制以及构成薄膜的单个晶粒之间的交换耦合强度。我们的工作为 CrO 的磁有序机制提供了新的见解,并确立了单自旋磁强计作为一种通用且广泛适用于纳米尺度反铁磁薄膜的工具。