Labed Madani, Moon Ji-Yun, Kim Seung-Il, Park Jang Hyeok, Kim Justin S, Venkata Prasad Chowdam, Bae Sang-Hoon, Rim You Seung
Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea.
Institute of Semiconductor and System IC, Sejong University Seoul, Seoul 05006, Republic of Korea.
ACS Nano. 2024 Nov 5;18(44):30153-30183. doi: 10.1021/acsnano.4c09173. Epub 2024 Oct 22.
Ultrawide bandgap semiconductors such as AlGaN, AlN, diamond, and β-GaO have significantly enhanced the functionality of electronic and optoelectronic devices, particularly in harsh environment conditions. However, some of these materials face challenges such as low thermal conductivity, limited P-type conductivity, and scalability issues, which can hinder device performance under extreme conditions like high temperature and irradiation. In this review paper, we explore the integration of various two-dimensional materials (2DMs) to address these challenges. These materials offer excellent properties such as high thermal conductivity, mechanical strength, and electrical properties. Notably, graphene, hexagonal boron nitride, transition metal dichalcogenides, 2D and quasi-2D GaO, TeO, and others are investigated for their potential in improving ultrawide bandgap semiconductor-based devices. We highlight the significant improvement observed in the device performance after the incorporation of 2D materials. By leveraging the properties of these materials, ultrawide bandgap semiconductor devices demonstrate enhanced functionality and resilience in harsh environmental conditions. This review provides valuable insights into the role of 2D materials in advancing the field of ultrawide bandgap semiconductors and highlights opportunities for further research and development in this area.
诸如AlGaN、AlN、金刚石和β-GaO等超宽带隙半导体显著增强了电子和光电器件的功能，尤其是在恶劣环境条件下。然而，这些材料中的一些面临着诸如低热导率、有限的P型导电性和可扩展性问题等挑战，这可能会阻碍器件在高温和辐照等极端条件下的性能。在这篇综述论文中，我们探讨了各种二维材料（2DMs）的集成，以应对这些挑战。这些材料具有诸如高导热性、机械强度和电学性能等优异特性。值得注意的是，研究了石墨烯、六方氮化硼、过渡金属二硫属化物、二维和准二维GaO、TeO等材料在改善基于超宽带隙半导体的器件方面的潜力。我们强调了在掺入二维材料后器件性能所观察到的显著改善。通过利用这些材料的特性，超宽带隙半导体器件在恶劣环境条件下展现出增强的功能和韧性。这篇综述为二维材料在推进超宽带隙半导体领域中的作用提供了有价值的见解，并突出了该领域进一步研究和开发的机会。
