Yan Xin, Li Yao, Zhang Xia
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Nanoscale Horiz. 2024 Dec 16;10(1):56-77. doi: 10.1039/d4nh00385c.
Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.
由于其独特的准一维结构和新颖的物理特性，半导体纳米线被认为是下一代器件最有前景的候选材料之一。近年来，通过将纳米线与量子阱、量子点和二维材料等低维结构相结合，已开发出先进的异质结构。这些异维结构克服了均匀纳米线的局限性，并在高性能纳米光电器件中显示出巨大潜力。在本综述中，我们总结并讨论了纳米线异维结构在制造、性能和应用方面的最新进展。研究了主要的异维结构，包括纳米线/量子阱、纳米线/量子点和纳米线/二维材料。详细介绍了包括激光器、单光子源、发光二极管、光电探测器和太阳能电池在内的代表性光电器件。还讨论了相关的前景和挑战。
