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用于半导体器件的超长均匀碲纳米线的大规模绿色合成方法

Large-Scale Green Method for Synthesizing Ultralong Uniform Tellurium Nanowires for Semiconductor Devices.

作者信息

Lyu Zhiyi, Park Mose, Tang Yanjin, Choi Hoon, Song Seung Hyun, Lee Hoo-Jeong

机构信息

Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon-si 16419, Republic of Korea.

Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.

出版信息

Nanomaterials (Basel). 2024 Oct 10;14(20):1625. doi: 10.3390/nano14201625.

DOI:10.3390/nano14201625
PMID:39452962
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11510582/
Abstract

This study presents a large-scale green approach for synthesizing ultralong tellurium nanowires with diameters around 13 nm using a solution-based method. By adjusting key synthesis parameters such as the surfactant concentration, temperature, and reaction duration, we achieved high-quality, ultralong Te NWs. These nanowires exhibit properties suitable for use in semiconductor applications, particularly when employed as channel materials in thin-film transistors, displaying a pronounced gate effect with a high switch of up to 10 and a mobility of 0.9 cm Vs. This study underscores the potential of solvent-based methods in synthesizing large-scale ultralong Te NWs as a critical resource for future sustainable nanoelectronic devices.

摘要

本研究提出了一种大规模的绿色方法,使用基于溶液的方法合成直径约为13nm的超长碲纳米线。通过调整关键合成参数,如表面活性剂浓度、温度和反应持续时间,我们获得了高质量的超长碲纳米线。这些纳米线表现出适用于半导体应用的特性,特别是当用作薄膜晶体管的沟道材料时,显示出高达10的高开关比和0.9cm² V⁻¹ s⁻¹的迁移率的显著栅极效应。本研究强调了基于溶剂的方法在合成大规模超长碲纳米线方面的潜力,这是未来可持续纳米电子器件的关键资源。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/441344319c6a/nanomaterials-14-01625-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/51b77e988922/nanomaterials-14-01625-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/d0fc55982b7e/nanomaterials-14-01625-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/a0ccfef0dc7b/nanomaterials-14-01625-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/07812e15afee/nanomaterials-14-01625-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/4824df5f342a/nanomaterials-14-01625-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/d7c04bd2c592/nanomaterials-14-01625-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/0d9f08c911f7/nanomaterials-14-01625-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/441344319c6a/nanomaterials-14-01625-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/51b77e988922/nanomaterials-14-01625-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/d0fc55982b7e/nanomaterials-14-01625-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/a0ccfef0dc7b/nanomaterials-14-01625-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/07812e15afee/nanomaterials-14-01625-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/4824df5f342a/nanomaterials-14-01625-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/d7c04bd2c592/nanomaterials-14-01625-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/0d9f08c911f7/nanomaterials-14-01625-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/295f/11510582/441344319c6a/nanomaterials-14-01625-g008.jpg

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Van der Waals nanomesh electronics on arbitrary surfaces.任意表面上的范德瓦尔斯纳米网电子学。
Nat Commun. 2023 Apr 27;14(1):2431. doi: 10.1038/s41467-023-38090-8.
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Two-dimensional devices and integration towards the silicon lines.二维器件和向硅线的集成。
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Controlling upconversion in emerging multilayer core-shell nanostructures: from fundamentals to frontier applications.新兴多层核壳纳米结构中上转换的控制:从基础到前沿应用。
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In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks.溶液处理半导体的原位共振带工程可生成高性能n型热电纳米墨水。
Nat Commun. 2020 Apr 29;11(1):2069. doi: 10.1038/s41467-020-15933-2.
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Preparation, environmental application and prospect of biochar-supported metal nanoparticles: A review.生物炭负载金属纳米粒子的制备、环境应用及展望:综述
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