Park Mose, Lyu Zhiyi, Song Seung Hyun, Lee Hoo-Jeong
Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Eastern Institute of Technology, Ningbo 315200, China.
Nanomaterials (Basel). 2025 Jul 21;15(14):1128. doi: 10.3390/nano15141128.
In this study, we propose a method for systematic nanowire length control through the precise control of the polyvinylpyrrolidone (PVP) concentration during the synthesis of tellurium nanowires. Furthermore, we report the changes in the electrical properties of thin-film transistor (TFT) devices with different lengths of synthesized tellurium nanowires used as channels. Through the use of scanning electron microscopy (SEM) and atomic force microscopy (AFM), it was determined that the length of the wires increased in relation to the amount of PVP incorporated, while the diameter remained consistent. The synthesized long wires formed a well-connected percolation network with a junction density of 4.6 junctions/µm, which enabled the fabrication of devices with excellent electrical properties, the highest on/off ratio of 10, and charge mobility of 1.1 cm/V·s. In contrast, wires with comparatively reduced PVP content demonstrated a junction density of 2.1 junctions/µm, exhibiting a lower on/off ratio and reduced charge mobility. These results provide guidance on how the amount of PVP added during wire growth affects the length of the synthesized wires and how it affects the connectivity between the wires when they form a network, which may help optimize the performance of high-performance nanoelectronic devices.
在本研究中,我们提出了一种通过在碲纳米线合成过程中精确控制聚乙烯吡咯烷酮(PVP)浓度来系统控制纳米线长度的方法。此外,我们报告了以不同长度的合成碲纳米线作为沟道的薄膜晶体管(TFT)器件的电学性能变化。通过使用扫描电子显微镜(SEM)和原子力显微镜(AFM),确定了线的长度随着掺入的PVP量增加而增加,而直径保持一致。合成的长线形成了连接良好的渗流网络,结密度为4.6个结/μm,这使得能够制造出具有优异电学性能、最高开/关比为10以及电荷迁移率为1.1 cm²/V·s的器件。相比之下,PVP含量相对减少的线的结密度为2.1个结/μm,表现出较低的开/关比和降低的电荷迁移率。这些结果为线生长过程中添加的PVP量如何影响合成线的长度以及如何影响线形成网络时它们之间的连通性提供了指导,这可能有助于优化高性能纳米电子器件的性能。