Arkhipov Alexander, Trofimovich Karina, Arkhipov Nikolay, Gabdullin Pavel
Institute of Electronics and Telecommunications, Peter the Great St. Petersburg Polytechnic University, 195251 St. Petersburg, Russia.
Nanomaterials (Basel). 2024 Oct 21;14(20):1684. doi: 10.3390/nano14201684.
The possible contribution of phonon drag effect to the thermoelectrically sustained potential of a heated nanoisland on a semiconductor surface was estimated in a first principal consideration. We regarded electrons and phonons as interacting particles, and the interaction cross-section was derived from the basic theory of semiconductors. The solution of the equation of motion for average electrons under the simultaneous action of phonon drag and electric field gave the distributions of phonon flux, density of charge carriers and electric potential. Dimensional suppression of thermal conductance and electron-phonon interaction were accounted for but found to be less effective than expected. The developed model predicts the formation of a layer with a high density of charge carriers that is practically independent of the concentration of dopant ions. This layer can effectively intercept the phonon flow propagating from the heated nanoisland. The resulting thermoEMF can have sufficient magnitudes to explain the low-voltage electron emission capability of nanoisland films of metals and sp-bonded carbon, previously studied by our group. The phenomenon predicted by the model can be used in thermoelectric converters with untypical parameters or in systems for local cooling.
在初步的第一性原理考虑中，估算了声子拖拽效应对于半导体表面加热纳米岛的热电维持电势的可能贡献。我们将电子和声子视为相互作用的粒子，并从半导体的基础理论推导出相互作用截面。在声子拖拽和电场同时作用下，平均电子运动方程的解给出了声子通量、载流子密度和电势的分布。考虑了热导率的维度抑制和电子 - 声子相互作用，但发现其效果不如预期。所建立的模型预测形成了一个载流子高密度层，该层实际上与掺杂离子浓度无关。该层可以有效地拦截从加热纳米岛传播的声子流。由此产生的热电动势可能具有足够的大小，以解释我们小组之前研究的金属和sp键合碳的纳米岛薄膜的低电压电子发射能力。该模型预测的现象可用于具有非典型参数的热电转换器或局部冷却系统。
