Choi Tae-Min, Jung Eun-Su, Yoo Jin-Uk, Lee Hwa-Rim, Pyo Sung-Gyu
School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.
Micromachines (Basel). 2024 Sep 28;15(10):1204. doi: 10.3390/mi15101204.
In this study, we analyze metal-insulator-metal (MIM) capacitors with different thicknesses of SixNy film (650 Å, 500 Å, and 400 Å) and varying levels of film quality to improve their capacitance density. SixNy thicknesses of 650 Å, 500 Å, and 400 Å are used with four different conditions, designated as MIM (N content 1.49), NEWMIM (N content 28.1), DAMANIT (N content 1.43), and NIT (N content 0.30). We divide the C-V characteristics into two categories: voltage coefficient of capacitance (VCC) and temperature coefficient of capacitance (TCC). There was an overall increase in the VCC as the thickness of the SixNy film decreased, with some variation depending on the condition. However, the TCC did not vary significantly with thickness, only with condition. At the same thickness, the NIT condition yielded the highest capacitance density, while the MIM condition showed the lowest capacitance density. This difference was due to the actual thickness of the film and the variation in its k-value depending on the condition. The most influential factor for capacitance uniformity was the thickness uniformity of the SixNy film.
在本研究中，我们分析了具有不同厚度的SixNy薄膜（650 Å、500 Å和400 Å）以及不同薄膜质量水平的金属-绝缘体-金属（MIM）电容器，以提高其电容密度。650 Å、500 Å和400 Å的SixNy厚度与四种不同条件一起使用，分别指定为MIM（N含量1.49）、NEWMIM（N含量28.1）、DAMANIT（N含量1.43）和NIT（N含量0.30）。我们将C-V特性分为两类：电容电压系数（VCC）和电容温度系数（TCC）。随着SixNy薄膜厚度的减小，VCC总体上有所增加，具体变化因条件而异。然而，TCC并没有随厚度显著变化，仅随条件变化。在相同厚度下，NIT条件下的电容密度最高，而MIM条件下的电容密度最低。这种差异是由于薄膜的实际厚度及其k值随条件的变化。影响电容均匀性的最主要因素是SixNy薄膜的厚度均匀性。
