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通过引入共振能级提高SnTe的热电性能。

Enhanced Thermoelectric Performance of SnTe via Introducing Resonant Levels.

作者信息

Yang Manman, Jia Jin, Yu Haijun, Li Yimin, Han Lu, Sun Hairui, Jia Haowen, Zhu Yuanyuan

机构信息

School of Electronic Engineering, Huainan Normal University, Huainan 232038, China.

Key Laboratory of Spin Electron and Nanomaterials of Anhui Higher Education Institutes, Suzhou University, Suzhou 234000, China.

出版信息

Molecules. 2024 Oct 21;29(20):4974. doi: 10.3390/molecules29204974.

Abstract

SnTe has emerged as a non-toxic and environmentally friendly alternative to the high-performance thermoelectric material PbTe, attracting significant interest in sustainable energy applications. In our previous work, we successfully synthesized high-quality SnTe with reduced thermal conductivity under high-pressure conditions. Building on this, in this work, we introduced indium (In) doping to further decrease thermal conductivity under high pressure. By incorporating resonance doping into the SnTe matrix, we aimed to enhance the electrical transport properties while maintaining low thermal conductivity. This approach enhances the Seebeck coefficient to an impressive 153 μVK at 735 K, marking a notable enhancement compared to undoped SnTe. Furthermore, we noted a substantial decrease in total thermal conductivity, dropping from 6.91 to 3.88 WmK at 325 K, primarily due to the reduction in electrical conductivity. The synergistic impact of decreased thermal conductivity and heightened Seebeck coefficient resulted in a notable improvement in the thermoelectric figure of merit () and average , achieving approximately 0.5 and 0.22 in the doped samples, respectively. These advancements establish SnInTe as a promising candidate to replace PbTe in thermoelectric applications, providing a safer and more environmentally sustainable option.

摘要

碲化锡(SnTe)已成为高性能热电材料碲化铅(PbTe)的一种无毒且环保的替代品,在可持续能源应用中引起了广泛关注。在我们之前的工作中,我们在高压条件下成功合成了具有降低热导率的高质量碲化锡。在此基础上,在这项工作中,我们引入铟(In)掺杂以在高压下进一步降低热导率。通过将共振掺杂引入碲化锡基体,我们旨在提高电输运性能,同时保持低热导率。这种方法在735 K时将塞贝克系数提高到了令人印象深刻的153 μVK,与未掺杂的碲化锡相比有显著提高。此外,我们注意到总热导率大幅下降,在325 K时从6.91 WmK降至3.88 WmK,这主要是由于电导率的降低。热导率降低和塞贝克系数提高的协同作用导致热电优值()和平均热电优值有显著改善,在掺杂样品中分别达到约0.5和0.22。这些进展使锡铟碲(SnInTe)成为热电应用中替代碲化铅的有前途的候选材料,提供了一种更安全、更环境可持续的选择。

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